2SK2907 Fuji Electric, 2SK2907 Datasheet
2SK2907
Manufacturer Part Number
2SK2907
Description
N-channel MOS-FET
Manufacturer
Fuji Electric
Datasheet
1.2SK2907.pdf
(3 pages)
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK2907
Manufacturer:
FUJI
Quantity:
8 500
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Part Number:
2SK2907
Manufacturer:
FUJITSU
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Company:
Part Number:
2SK2907-01
Manufacturer:
FUJITSU
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12 500
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Part Number:
2SK2907-01R
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Company:
Part Number:
2SK2907-01R
Manufacturer:
FUJITSU
Quantity:
12 500
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- Avalanche Rated
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
- Absolute Maximum Ratings (T
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
- Electrical Characteristics (T
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
Turn-Off-Time t
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
Item
Thermal Resistance
> Features
> Applications
> Maximum Ratings and Characteristics
Thermal Characteristics
on
off
(t
(t
on
on
=t
=t
d(off)
d(on)
+t
+t
f
r
)
)
C
=25°C),
C
=25°C),
FAP-IIIB Series
2SK2907-01
unless otherwise specified
unless otherwise specified
BV
R
C
C
C
Q
R
R
V
V
E
P
V
V
T
T
Symbol
Symbol
g
I
I
I
I
t
t
t
t
I
t
DS
D
D(puls)
GS
AV
D
ch
stg
DSS
GS(th)
DSS
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
SD
rr
rr
th(ch-c)
th(ch-a)
L=0.169mH,Vcc=24V
I
I
V
V
VG
I
I
L = 100µH
channel to case
channel to ambient
D
D
D
D
DS
GS
=1mA
=10mA
=50A
=50A
I
F
S
-55 ~ +150
=60V
=100A V
Symbol
=0V
-dI/dt=100A/µs T
=±30V
Rating
1268.3
Test conditions
I
F
±100
±400
=50A V
125
150
±30
V
R
I
V
f=1MHz
V
60
D
V
GS
GS
=100A
GS
CC
DS
GS
=10V
=10
=0V T
V
V
T
T
V
V
T
=25V
=30V
=0V
ch
ch
ch
GS
DS=
GS
DS
=25°C
=125°C
=25°C
GS
=25V
=0V
=10V
V
V
=0V
DS
GS
ch
Unit
mJ*
ch
°C
°C
=0V
=25°C
W
V
A
A
V
=25°C
> Outline Drawing
N-channel MOS-FET
60V
Min.
Min.
100
2,5
25
60
Typ.
Typ.
5400
2100
0,21
550
200
160
150
3,0
0,2
5,7
1,0
10
10
55
29
85
±100A 125W
Max.
Max.
8100
3150
30,00 °C/W
500
100
830
350
240
230
3,5
1,0
7,8
1,5
50
1,0 °C/W
Unit
Unit
m
m
mA
µC
µA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
V
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2SK2907 Summary of contents
Page 1
... Turn-Off-Time off on d(off) f Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance 2SK2907-01 FAP-IIIB Series =25°C), unless otherwise specified Symbol Rating ±100 D I ±400 D(puls) V ± 1268 ...
Page 2
... V =0V; f=1MHz [V] DS Maximum Avalanche Energy vs. starting T ch Eas=f(starting =24V starting T [°C] ch 2SK2907-01 FAP-IIIB Series Drain-Source On-State Resistance vs f =50A; V =10V DS(on [°C] ch Typical Forward Transconductance vs =f(I ); 80µs pulse test; V =25V; T =25° ...
Page 3
... N-channel MOS-FET 60V ±100A 125W > Characteristics 125 100 120 100 2SK2907-01 FAP-IIIB Series Typical Switching Characteristics t=f 30V 10V [V] SD Power Dissipation P =f [°C] C Maximum Avalanche Current vs. starting T I =f(starting ...