2SK2907 Fuji Electric, 2SK2907 Datasheet - Page 2

• Manufacturer Part Number: 2SK2907
• Description: N-channel MOS-FET
• Manufacturer: Fuji Electric

> Characteristics
60V
N-channel MOS-FET
Maximum Avalanche Energy vs. starting T
Typical Drain-Source On-State-Resistance vs. I
Eas=f(starting T
Typical Output Characteristics
Typical Capacitances vs. V
R
starting T
I
DS(on)
D
=f(V
C=f(V
=f(I
DS
); 80µs pulse test; T
D
); 80µs pulse test; T
DS
4
7
10
ch
ch
); V
V
V
): V
[°C]
DS
DS
I
D
GS
±100A
CC
[V]
[A]
[V]
1
=0V; f=1MHz
=24V; I
AV
C
=25°C
C
=25°C
125W
A
DS
ch
D
This specification is subject to change without notice!
FAP-IIIB Series
2SK2907-01
Drain-Source On-State Resistance vs. T
Typical Forward Transconductance vs. I
Safe Operation Area
Typical Gate Charge Characteristic
I
D
g
=f(V
fs
=f(I
DS
D
); 80µs pulse test; V
R
): D=0,01, Tc=25°C
V
DS(on)
V
12
GS
DS
=f(Qg); I
[V]
= f(T
Qg [nC]
T
ch
I
ch
2
D
8
[°C]
); I
D
[A]
5
=100A; T
D
=50A; V
DS
=25V; T
C
=25°C
GS
=10V
ch
=25°C
ch
D
Forward Characteristics of Reverse Diode
Transient Thermal impedance
I
D
Typical Transfer Characteristics
Gate Threshold Voltage vs. T
=f(V
Z
thch
I
F
GS
V
=f(V
=f(t) parameter:D=t/T
GS(th)
); 80µs pulse test; V
SD
t [s]
=f(T
); 80µs pulse test; T
ch
T
V
V
3
); I
ch
GS
SD
D
[°C]
=10mA; V
[V]
[V]
9
DS
6
=25V; T
DS
ch
=V
=25°C
GS
ch
=25°C
ch