2SK3027 Panasonic Semiconductor, 2SK3027 Datasheet

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2SK3027

Manufacturer Part Number

2SK3027

Description

Silicon N-Channel Power F-MOS FET

Manufacturer

Panasonic Semiconductor

Datasheet

1.2SK3027.pdf (1 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

2SK3027

Manufacturer:

Panasonic

Quantity:

12 500

Current page: 1 of 1
Download datasheet (25Kb)

Power F-MOS FETs

2SK3027 (Tentative)

Silicon N-Channel Power F-MOS FET

*

Drain to Source breakdown voltage

Gate to Source voltage

Drain current

Avalanche energy capacity

Allowable power

dissipation

Channel temperature

Storage temperature

Drain to Source cut-off current

Gate to Source leakage current

Drain to Source breakdown voltage

Gate threshold voltage

Drain to Source ON-resistance

Forward transfer admittance

Diode forward voltage

Input capacitance (Common Source)

Output capacitance (Common Source)

Reverse transfer capacitance (Common Source)

Turn-on time (delay time)

Rise time

Fall time

Turn-off time (delay time)

Thermal resistance between channel and case

Thermal resistance between channel and atmosphere

Avalanche energy capacity guaranteed

High-speed switching

Low ON-resistance

No secondary breakdown

Low-voltage drive

High electrostatic breakdown voltage

Contactless relay

Diving circuit for a solenoid

Driving circuit for a motor

Control equipment

Switching power supply

L = 0.1mH, I

Features

Applications

Absolute Maximum Ratings

Electrical Characteristics

Parameter

Parameter

L

= 50A, 1 pulse

DC

Pulse

T

Ta = 25°C

C

= 25°C

Symbol

V

V

I

I

EAS

P

T

T

Symbol

I

I

V

V

R

R

| Y

V

C

C

C

t

t

t

t

R

R

d(on)

r

f

d(off)

D

DP

DSS

GSS

D

ch

stg

DS(on)1

DS(on)2

iss

oss

rss

th(ch-c)

th(ch-a)

DSS

GSS

DSS

th

DSF

fs

(T

|

*

C

(T

= 25°C)

C

= 25°C)

V

V

I

V

V

V

V

I

V

V

V

D

DR

DS

GS

DS

GS

GS

DS

DS

DD

GS

55 to +150

Ratings

= 1mA, V

= 25A, V

±100

= 50V, V

= ±20V, V

= 10V, I

= 10V, I

= 4V, I

= 10V, I

= 10V, V

= 10V, R

= 30V, I

±20

±50

125

150

60

60

2

D

Conditions

GS

D

D

D

GS

D

= 25A

GS

GS

L

= 1mA

= 25A

= 25A

= 25A

DS

= 0

= 1.2

= 0

= 0

= 0, f = 1MHz

= 0

Unit

mJ

°C

°C

W

V

V

A

A

Internal Connection

min

3.2±0.1

60

25

1

7

G

1

9.9±0.3

2 3

3600

1250

680

250

960

typ

11

49

20

65

8

5.08±0.4

1.45±0.15

2.54±0.2

0.75±0.1

1.2±0.15

TO-220E Package (a)

S

max

2.08

62.5

±10

2.5

10

12

17

1.2

4.6±0.2

D

0.7±0.1

1: Gate

2: Drain

3: Source

2.9±0.2

2.6±0.1

unit: mm

°C/W

°C/W

Unit

m

m

pF

pF

pF

ns

ns

ns

ns

V

V

V

S

A

A

1

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