2SK3035 Panasonic Semiconductor, 2SK3035 Datasheet

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2SK3035

Manufacturer Part Number

2SK3035

Description

Silicon N-Channel Power F-MOS FET

Manufacturer

Panasonic Semiconductor

Datasheet

1.2SK3035.pdf (1 pages)

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Power F-MOS FETs

2SK3035 (Tentative)

Silicon N-Channel Power F-MOS FET

*

Drain to Source breakdown voltage

Gate to Source voltage

Drain current

Avalanche energy capacity

Allowable power

dissipation

Channel temperature

Storage temperature

Drain to Source cut-off current

Gate to Source leakage current

Drain to Source breakdown voltage

Gate threshold voltage

Drain to Source ON-resistance

Forward transfer admittance

Diode forward voltage

Input capacitance (Common Source)

Output capacitance (Common Source)

Reverse transfer capacitance (Common Source)

Turn-on time (delay time)

Rise time

Fall time

Turn-off time (delay time)

Thermal resistance between channel and case

Thermal resistance between channel and atmosphere

Avalanche energy capacity guaranteed

High-speed switching

Low ON-resistance

No secondary breakdown

Low-voltage drive

High electrostatic breakdown voltage

Contactless relay

Diving circuit for a solenoid

Driving circuit for a motor

Control equipment

Switching power supply

L = 0.1mH, I

Features

Applications

Absolute Maximum Ratings

Electrical Characteristics

Parameter

Parameter

L

= 3A, 1 pulse

DC

Pulse

T

Ta = 25°C

C

= 25°C

Symbol

V

V

I

I

EAS

P

T

T

Symbol

I

I

V

V

R

R

| Y

V

C

C

C

t

t

t

t

R

R

d(on)

r

f

d(off)

D

DP

DSS

GSS

D

ch

stg

DS(on)1

DS(on)2

iss

oss

rss

th(ch-c)

th(ch-a)

DSS

GSS

DSS

th

DSF

fs

(T

|

*

C

(T

= 25°C)

C

= 25°C)

V

V

I

V

V

V

V

I

V

V

V

D

DR

DS

GS

DS

GS

GS

DS

DS

DD

GS

55 to +150

Ratings

= 1mA, V

= 3A, V

= 120V, V

= ±20V, V

= 10V, I

= 10V, I

= 4V, I

= 10V, I

= 10V, V

= 10V, R

0.45

= 100V, I

150

±20

150

±3

±6

10

1

D

GS

Conditions

GS

D

D

D

= 2A

GS

L

D

= 1mA

= 2A

= 2A

= 0

GS

DS

= 0

= 50

= 2A

= 0, f = 1MHz

= 0

= 0

Unit

mJ

°C

°C

W

V

V

A

A

Internal Connection

0.93±0.1

min

150

1.5

1

1

G

4.35±0.1

6.5±0.1

5.3±0.1

4.6±0.1

2

2.3±0.1

0.52

190

135

540

typ

0.6

2.7

45

25

13

25

3

0.75±0.1

1.0±0.1

S

max

12.5

±10

125

0.1±0.05

0.5±0.1

2.5

1.1

1.3

10

1.4

U Type Package

D

2.3±0.1

1: Gate

2: Drain

3: Source

unit: mm

°C/W

°C/W

Unit

m

m

0.5±0.1

pF

pF

pF

ns

ns

ns

ns

V

V

V

S

A

A

1

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