2SK3036 Panasonic Semiconductor, 2SK3036 Datasheet

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2SK3036

Manufacturer Part Number
2SK3036
Description
Silicon N-Channel Power F-MOS FET
Manufacturer
Panasonic Semiconductor
Datasheet
Power F-MOS FETs
2SK3036
Silicon N-Channel Power F-MOS FET
*
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time (delay time)
Fall time
Avalanche energy capacity guaranteed
High-speed switching
Low ON-resistance
No secondary breakdown
Low-voltage drive
High electrostatic breakdown voltage
Contactless relay
Diving circuit for a solenoid
Driving circuit for a motor
Control equipment
Switching power supply
L = 0.1mH, I
Features
Applications
Absolute Maximum Ratings
Electrical Characteristics
Parameter
Parameter
L
= 6A, 1 pulse
DC
Pulse
T
Ta = 25°C
C
= 25°C
Symbol
V
V
I
I
EAS
P
T
T
Symbol
I
I
V
V
R
R
| Y
V
C
C
C
t
t
t
on
d(off)
f
D
DP
DSS
GSS
D
ch
stg
DS(on)1
DS(on)2
iss
oss
rss
DSS
GSS
DSS
th
DSF
fs
(T
|
*
C
(T
= 25°C)
C
= 25°C)
V
V
I
V
V
V
V
I
V
V
V
D
DR
DS
GS
DS
GS
GS
DS
DS
DD
GS
55 to +150
Ratings
= 1mA, V
= 6A, V
= 120V, V
= ±20V, V
= 10V, I
= 10V, I
= 4V, I
= 10V, I
= 10V, V
= 10V, R
= 100V, I
150
±20
±12
150
3.6
±6
20
1
D
GS
Conditions
GS
D
D
D
= 3A
GS
L
D
= 1mA
= 3A
= 3A
= 0
GS
DS
= 0
= 33
= 3A
= 0, f = 1MHz
= 0
= 0
Unit
mJ
°C
°C
W
V
V
A
A
Internal Connection
0.93±0.1
min
150
1
1
G
4.35±0.1
6.5±0.1
5.3±0.1
4.6±0.1
2
2.3±0.1
300
340
300
920
250
typ
4.2
76
40
80
3
0.75±0.1
1.0±0.1
S
max
±10
450
510
0.1±0.05
0.5±0.1
2.5
10
1.6
U Type Package
D
2.3±0.1
1: Gate
2: Drain
3: Source
unit: mm
Unit
m
m
0.5±0.1
pF
pF
pF
ns
ns
ns
V
V
V
S
A
A
1

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