2SK3192 Panasonic Semiconductor, 2SK3192 Datasheet

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2SK3192

Manufacturer Part Number
2SK3192
Description
Silicon N-channel power MOSFET
Manufacturer
Panasonic Semiconductor
Datasheet
Power MOSFETs
2SK3192
Silicon N-channel power MOSFET
■ Features
■ Applications
■ Absolute Maximum Ratings T
Note) * : L = 1.74 mH, I
■ Electrical Characteristics T
Publication date: January 2004
• Avalanche energy capability guaranteed
• High-speed switching
• Low ON resistance R
• No secondary breakdown
• PDP
• Switching mode regulator
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability
Power dissipation
Channel temperature
Storage temperature
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Short-circuit forward transfer capacitance
(Common source)
Short-circuit output capacitance
(Common source)
Reverse transfer capacitance
(Common source)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Parameter
Parameter
L
= 30 A, V
on
T
a
*
= 25°C
DD
= 50 V, 1 pulse, T
C
Symbol
V
V
= 25°C ± 3°C
EAS
Symbol
T
R
I
T
P
I
Y
V
C
DSS
GSS
DP
t
t
D
stg
I
I
C
ch
DS(on)
C
C
D
V
d(on)
d(off)
DSS
GSS
DSS
t
t
= 25°C
oss
iss
rss
r
f
th
fs
−55 to +150
Rating
I
V
V
V
V
V
V
V
V
D
±120
±30
±30
250
925
100
150
DS
GS
DS
GS
DS
DS
DD
GS
= 1 mA, V
3
a
SJG00029BED
= 25°C
= 200 V, V
= ±30 V, V
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, V
= 10 V
= 100 V, I
Conditions
GS
Unit
D
D
D
mJ
°C
°C
W
GS
V
V
A
A
D
= 1 mA
= 15 A
= 15 A
GS
DS
= 0
= 15 A, R
= 0, f = 1 MHz
= 0
= 0
L
= 6.7 Ω
Marking Symbol: K3192
Internal Connection
1
15.0
11.0
10.9
Min
250
2
8
G
2
±0.3
±0.2
±0.5
3
5.45
4 200
1 600
Typ
650
115
330
130
1.1
2.0
50
15
45
φ 3.2
±0.3
±0.1
±0.2
D
S
±0.1
TOP-3F-B1 Package
Max
±1
10
68
4
5.0
EIAJ: SC-92
±0.2
Unit: mm
1: Gate
2: Drain
3: Source
0.6
(3.2)
Unit
2.0
mΩ
µA
µA
pF
pF
pF
±0.2
ns
ns
ns
ns
V
V
S
±0.1
1

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2SK3192 Summary of contents

Page 1

... Power MOSFETs 2SK3192 Silicon N-channel power MOSFET ■ Features • Avalanche energy capability guaranteed • High-speed switching • Low ON resistance R on • No secondary breakdown ■ Applications • PDP • Switching mode regulator ■ Absolute Maximum Ratings T Parameter Drain-source surrender voltage Gate-source surrender voltage ...

Page 2

... Electrical Characteristics (continued) T Parameter Diode forward voltage Reverse recovery time Reverse recovery charge Gate charge load Gate-source charge Gate-drain charge Thermal resistance (ch-c) Thermal resistance (ch-a) Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Safe operation area ...

Page 3

... iss oss rss MHz = 25° 100 ( V ) Drain-source voltage V DS SJG00029BED 2SK3192 3 ...

Page 4

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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