2SK3269 Panasonic Semiconductor, 2SK3269 Datasheet
2SK3269
Manufacturer Part Number
2SK3269
Description
N-channel enhancement mode MOSFET
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SK3269.pdf
(3 pages)
Power MOSFETs
2SK3269
N-channel enhancement mode MOSFET
■ Features
■ Applications
■ Absolute Maximum Ratings T
Note) * : L = 0.2 mH, I
■ Electrical Characteristics T
Publication date: March 2004
• Low on-resistance, low Q
• High avalanche resistance
• For PDP
• For high-speed switching
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability
Power dissipation
Channel temperature
Storage temperature
Drain-source surrender voltage
Gate threshold voltage
Drain-source cutoff current
Gate-source cutoff current
Drain-source ON resistance
Forward transfer admittance
Short-circuit forward transfer capacitance
(Common-source)
Short-circuit output capacitance
(Common-source)
Reverse transfer capacitance
(Common-source)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Parameter
Parameter
L
= 15 A, 1 pulse
T
a
*
g
= 25°C
C
Symbol
V
V
= 25°C ± 3°C
EAS
Symbol
T
R
I
T
P
I
Y
V
C
DSS
GSS
DP
t
t
D
stg
I
I
C
ch
DS(on)
C
C
d(off)
D
V
d(on)
DSS
GSS
T
DSS
t
= 25°C
oss
iss
rss
f
th
fs
r
−55 to +150
Rating
I
V
V
V
V
V
V
V
R
D
±100
22.5
100
±20
±25
150
L
1.4
DS
DS
GS
GS
DS
DS
DD
40
= 1 mA, V
= 2.5 Ω, V
SJG00032AED
= 10 V, I
= 80 V, V
= ±20 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= 30 V, I
Conditions
GS
Unit
D
D
D
D
GS
mJ
°C
°C
W
GS
GS
V
V
A
A
= 1 mA
= 12 A
= 12 A
= 12 A
DS
= 0
= 10 V
= 0
= 0, f = 1 MHz
= 0
Marking Symbol: K3269
Internal Connection
1
10.5
Min
100
2
2.0
G
±0.3
6
3
0.8
2.54
1.4
±0.1
±0.1
±0.3
Typ
960
285
70
11
85
15
10
65
35
TO-220C-G1 Package
2.5
D
S
Max
±0.2
100
(10.2)
4.0
±1
4.6
(8.9)
10
±0.2
1: Gate
2: Drain
3: Source
Unit: mm
1.4
0 to 0.3
±0.1
Unit
mΩ
µA
µA
pF
pF
pF
ns
ns
ns
ns
V
V
S
1
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2SK3269 Summary of contents
Page 1
... Power MOSFETs 2SK3269 N-channel enhancement mode MOSFET ■ Features • Low on-resistance, low Q g • High avalanche resistance ■ Applications • For PDP • For high-speed switching ■ Absolute Maximum Ratings T Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current ...
Page 2
... Electrical Characteristics (continued) T Parameter Diode foward voltage Thermal resistance (ch-c) Thermal resistance (ch-a) Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Safe operation area 1 000 Non repetitive pulse = 25° 100 µ 100 ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...