2SK3494 Panasonic Semiconductor, 2SK3494 Datasheet
2SK3494
Related parts for 2SK3494
2SK3494 Summary of contents
Page 1
... Power MOSFETs 2SK3494 N-channel enhancement mode MOSFET ■ Features • Low on-resistance, low Q g • High avalanche resistance ■ Applications • For PDP • For high-speed switching ■ Absolute Maximum Ratings T Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current ...
Page 2
... Electrical Characteristics (continued) T Parameter Diode foward voltage Reverse recovery time Reverse recovery charge Gate charge load Gate-source charge Gate-drain charge Thermal resistance (ch-c) Thermal resistance (ch-a) Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Safe operation area ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...