2SK3516-01SJ Fuji Electric, 2SK3516-01SJ Datasheet - Page 3

• Manufacturer Part Number: 2SK3516-01SJ
• Description: N-CHANNEL SILICON POWER MOSFET
• Manufacturer: Fuji Electric

2SK3516-01L,S,SJ
100
2.0
1.5
1.0
0.5
0.0
0.1
24
22
20
18
16
14
12
10
10
8
6
4
2
0
1
0.00
0
-50
VGS=f(Qg):ID=8A, Tch=25°C
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
Typical Gate Charge Characteristics
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=4A,VGS=10V
0.25
-25
10
0.50
0
20
0.75
25
360V
Qg [nC]
VSD [V]
Tch [ C]
1.00
max.
225V
30
50
Vcc= 90V
1.25
75
40
typ.
1.50
100
50
1.75
125
2.00
150
60
100p
10n
10p
10
10
10
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1n
1p
2
1
0
10
-50
t=f(ID):Vcc=300V, VGS=10V, RG=10
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Typical Switching Characteristics vs. ID
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
-1
-25
td(on)
10
10
0
0
0
25
FUJI POWER MOSFET
VDS [V]
ID [A]
td(off)
10
Tch [ C]
50
1
max.
min.
75
10
100
10
2
Ciss
Coss
Crss
1
tr
tf
125
150
10
3
3