2SK3516-01SJ Fuji Electric, 2SK3516-01SJ Datasheet - Page 4

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2SK3516-01SJ

Manufacturer Part Number
2SK3516-01SJ
Description
N-CHANNEL SILICON POWER MOSFET
Manufacturer
Fuji Electric
Datasheet
2SK3516-01L,S,SJ
See Note: 1.
Note: 1. Guaranteed mark of avalanche ruggedness.
Type name
Trademark
Outline Drawings (mm)
Lot No.
10
10
10
10
10
10
10
10
10
10
1
-1
-2
-3
10
10
1
0
-1
-2
2
1
0
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
2
Maximum Avalanche Current Pulsewidth
I
-8
-6
AV
FUJI POWER MOS FET
3
Type(L)
=f(t
AV
10
DIMENSIONS ARE IN MILLIMETERS.
10
):starting Tch=25°C. Vcc=45V
Single Pulse
-7
-5
10
10
CONNECTION
-6
1
2
3
-4
GATE
DRAIN
SOURCE
PRE-SOLDER
10
t [sec]
t
AV
10
-5
[sec]
-3
See Note: 1.
OUT VIEW
Note: 1. Guaranteed mark of
10
Trademark
Type name
Lot No.
-4
10
avalanche ruggedness.
-2
Fig. 1.
10
FUJI POWER MOS FET
-3
Type(S)
10
4
-1
Solder Plating
Pre-Solder
DIMENSIONS ARE IN MILLIMETERS.
Notes
1. ( ) : Reference dimensions.
2. The metal part is covered with
the solder plating, part of cutting
is without the solder plating.
10
-2
10
4
CONNECTION
0
1
2
3
GATE
DRAIN
SOURCE
Fig. 1.
FUJI POWER MOSFET
See Note: 1.
Note: 1. Guaranteed mark of
OUT VIEW
Trademark
Type name
Lot No.
avalanche ruggedness.
Fig. 1.
FUJI POWER MOS FET
Type(SJ)
DIMENSIONS ARE IN MILLIMETERS.
Solder Plating
Pre-Solder
Notes
1. ( ) : Reference dimensions.
2. The metal part is covered with
the solder plating, part of cutting
is without the solder plating.
4
CONNECTION
1
3
2
GATE
DRAIN
SOURCE
Fig. 1.
4

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