2SK3539 Panasonic Semiconductor, 2SK3539 Datasheet
2SK3539
Manufacturer Part Number
2SK3539
Description
Silicon N-channel MOSFET
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SK3539.pdf
(3 pages)
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Silicon MOSFETs (Small Signal)
2SK3539
Silicon N-channel MOSFET
For switching
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2004
• High-speed switching
• Wide frequency band
• Gate protection diode built-in
Drain-source voltage
Gate-source voltage (Drain open)
Drain current
Peak drain current
Power dissipation
Channel temperature
Storage temperature
Drain-source surrender voltage
Drain-source cutoff current
Gate-Source cutoff current
Gate threshold voltage
Drain-source ON resistance
Forward trancfer admitance
Short-circuit forward transfer
capacitance (Common source)
Short-circuit output capacitance (Common source)
Reverse transfer capacitance (Common source)
Turn-on time
Turn-off time
2. * : t
on
Parameter
Parameter
, t
*
*
off
V
test circuit
GS
= 3.0 V
50 Ω
V
OUT
a
Symbol
Symbol
R
= 25°C ± 3°C
Y
470 Ω
V
V
V
I
I
C
T
DS(on)
C
C
I
T
V
t
P
t
DSS
GSS
I
GSO
a
DP
DSS
off
on
oss
DS
D
stg
rss
ch
iss
D
th
fs
= 25°C
−55 to +150
Rating
V
I
V
V
I
I
I
I
V
V
V
100
200
150
150
D
D
D
D
D
DD
±7
50
DD
DD
DS
GS
DS
= 10 µA, V
= 1.0 µA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
SJF00035BED
= 3 V, V
= 3 V, V
= 3 V
= 50 V, V
= ±7 V, V
= 3 V, V
GS
GS
Conditions
Unit
mW
mA
mA
V
°C
°C
GS
V
V
GS
= 0 V to 3 V, R
= 3 V to 0 V, R
GS
DS
GS
GS
DS
OUT
DS
V
= 0, f = 1 MHz
IN
= 0
= 0
= 2.5 V
= 4.0 V
= 3 V, f = 1 kHz
= 0
= 3 V
Marking Symbol: 5F
L
L
t
on
= 470 Ω
= 470 Ω
10˚
10%
0.3
(0.65) (0.65)
+0.1
–0.0
1
t
3
off
1.3
2.0
±0.1
±0.2
90%
Min
0.9
2
50
20
10%
90%
Typ
200
200
1.2
60
12
8
6
7
3
SMini3-G1 Package
Max
±5.0
1.0
1.5
15
12
0.15
EIAJ: SC-70
1: Gate
2: Source
3: Drain
+0.10
–0.05
Unit: mm
Unit
µA
µA
mS
pF
pF
pF
ns
ns
V
V
Ω
1
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2SK3539 Summary of contents
Page 1
... Silicon MOSFETs (Small Signal) 2SK3539 Silicon N-channel MOSFET For switching ■ Features • High-speed switching • Wide frequency band • Gate protection diode built-in ■ Absolute Maximum Ratings T Parameter Drain-source voltage Gate-source voltage (Drain open) Drain current Peak drain current Power dissipation ...
Page 2
... 160 120 120 160 Ambient temperature T (°C) a Y MHz 0.16 = 25° 0.12 0.08 0. 0.5 1.0 1.5 2.0 2.5 3.0 Gate-source voltage V ( 25° 2 1 1 ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...