2SK3815 Sanyo Semicon Device, 2SK3815 Datasheet

2SK3815

Manufacturer Part Number

2SK3815

Description

General-Purpose Switching Device Applications

Manufacturer

Sanyo Semicon Device

Datasheet

1.2SK3815.pdf (4 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2SK3815

Manufacturer:

SANYO

Quantity:

12 500

Current page: 1 of 4
Download datasheet (41Kb)

Ordering number : ENN8053

2SK3815

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Note : *1 V DD =20V, L=50 H, I AV =23A

Electrical Characteristics at Ta=25 C

Marking : K3815

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Avalanche Enargy (Single Pulse) *1

Avalanche Current *2

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

•

Low ON-resistance.

Ultrahigh-speed switching.

4V drive.

Motor drive, DC / DC converter.

Avalanche resistance guarantee.

*2 L 50 H, single pulse

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

V (BR)DSS

R DS (on)1

R DS (on)2

V GS (off)

Symbol

V GSS

V DSS

I GSS

I DSS

E AS

Tstg

I DP

Tch

I AV

P D

yfs

I D

I D =1mA, V GS =0

V DS =60V, V GS =0

V GS = 16V, V DS =0

V DS =10V, I D =1mA

V DS =10V, I D =12A

I D =12A, V GS =10V

I D =12A, V GS =4V

PW 10 s, duty cycle 1%

Tc=25 C

2SK3815

Conditions

93004QA TS IM TB-00000601

min

1.2

Ratings

typ

Ratings

--55 to +150

Continued on next page.

max

1.65

19.8

150

2.6

No.8053-1/4

Unit

Related parts for 2SK3815

2SK3815 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SK3815 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...

Page 2

... V IN 10V I D =12A =2.5 D PW= 2SK3815 P 2SK3815 Symbol Conditions Ciss V DS =20V, f=1MHz Coss V DS =20V, f=1MHz Crss V DS =20V, f=1MHz t d (on) See specified Test Circuit See specified Test Circuit (off) See specified Test Circuit. ...

Page 3

... Drain Current Time -- I D 1000 V DD =30V =10V 100 (on 0.1 1.0 Drain Current 2SK3815 30 Tc 3.0 3.5 4.0 0 IT07800 140 I D =12 A 120 100 --50 IT07802 ...

Page 4

... Amibient Tamperature Note on usage : Since the 2SK3815 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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