2SK656 Panasonic Semiconductor, 2SK656 Datasheet

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2SK656

Manufacturer Part Number
2SK656
Description
Silicon N-Channel MOS FET
Manufacturer
Panasonic Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
2SK656
Manufacturer:
NEC
Quantity:
800
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
2SK656
Manufacturer:
NEC
Quantity:
800
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
2SK656
Manufacturer:
NEC
Quantity:
800
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
2SK656
Manufacturer:
PANASONIC
Quantity:
16 800
Price:
Silicon MOS FETs (Small Signal)
2SK656
Silicon N-Channel MOS FET
For switching
* 1
* 2
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
High level output voltage
Low level output voltage
Input resistance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
Resistance ratio R
Pulse measurement
High-speed switching
Small drive current owing to high input inpedance
High electrostatic breakdown voltage
Features
Absolute Maximum Ratings
Electrical Characteristics
Parameter
Parameter
1
/R
2
= 1/50
Symbol
V
V
I
I
P
T
T
Symbol
I
I
V
V
R
| Y
V
V
R
C
C
C
t
t
on
off
D
DP
DSS
GSS
D
ch
stg
DS(on)
1
iss
oss
rss
DSS
GSO
DSS
th
OH
OL
* 2
fs
* 2
(Ta = 25°C)
+ R
|
2
(Ta = 25°C)
* 1
V
V
I
I
I
I
V
V
V
V
V
D
D
D
D
DS
GS
DD
DD
DS
DD
DD
55 to +150
Ratings
= 100 A, V
= 100 A, V
= 20mA, V
= 20mA, V
= 10V, V
= 8V, V
= 10V, V
= 5V, V
= 5V, V
= 5V, V
= 5V, V
100
200
200
150
50
8
Conditions
GS
GS
DS
GS
GS
GS
GS
DS
GS
GS
DS
= 0 to 5V, R
= 5 to 0V, R
= 0
= 1V, R
= 5V, R
= 0
= 5V
= 5V, f = 1kHz
= 0, f = 1MHz
= 0
= V
Unit
mW
mA
mA
°C
°C
V
V
GS
L
L
= 200
= 200
L
L
= 200
= 200
Internal Connection
min
100
1.5
4.5
40
50
20
G
marking
1
1.27
4.0±0.2
typ
4.5
1.1
35
2
9
1.27
R
3
1
2.54±0.15
R
2
New S Type Package
max
200
3.5
10
80
50
1
1
1
EIAJ: SC-72
1: Source
2: Drain
3: Gate
unit: mm
D
S
Unit
mS
k
pF
pF
pF
V
V
V
V
A
A
s
s
1

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2SK656 Summary of contents

Page 1

... Silicon MOS FETs (Small Signal) 2SK656 Silicon N-Channel MOS FET For switching Features High-speed switching Small drive current owing to high input inpedance High electrostatic breakdown voltage Absolute Maximum Ratings Parameter Symbol Drain to Source breakdown voltage V Gate to Source voltage V Drain current I D Max drain current ...

Page 2

... Drain to source voltage 1000 V =1V O Ta=25˚C 300 100 0.3 0.1 0.1 0 100 ( mA ) Output current I O 2SK656 120 V =5V DS 100 80 Ta=–25˚C 25˚C 60 75˚ Gate to source voltage DS(on) ...

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