SI4482DY Vishay, SI4482DY Datasheet
SI4482DY
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SI4482DY Summary of contents
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... V SO Top View Ordering Information: Si4482DY Si4482DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction ...
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... Si4482DY Vishay Siliconix SPECIFICATIONS (T J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b b Drain Source On State Resistance Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge ...
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... Q - Total Gate Charge (nC) g Document Number: 70749 S-03951—Rev. B, 26-May- 2.0 2.5 3.0 3.5 4 Si4482DY Vishay Siliconix Transfer Characteristics 125_C C 8 25_C Gate-to-Source Voltage (V) GS Capacitance 2500 C iss ...
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... Si4482DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.2 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.6 0.3 0.0 - 0.3 - 0.6 - 0 Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. www.vishay.com 2 25_C J 0.6 0.8 1.0 1.2 = 250 µ 100 125 150 Normalized Thermal Transient Impedance, Junction-to-Ambient ...