SI4482DY Vishay, SI4482DY Datasheet - Page 4

• Manufacturer Part Number: SI4482DY
• Description: N-Channel 100-V (D-S) MOSFET
• Manufacturer: Vishay

www.DataSheet.co.kr
www.vishay.com
2-4
Si4482DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.01
0.1
- 0.3
- 0.6
- 0.9
- 1.2
40
10
0.6
0.3
0.0
1
2
1
- 50
10
0
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
T
J
0
- Source-to-Drain Voltage (V)
= 150_C
T
Threshold Voltage
J
0.4
- Temperature (_C)
25
10
-3
0.6
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
I
D
75
= 250 µA
Single Pulse
0.8
100
T
J
= 25_C
1.0
125
10
-2
Square Wave Pulse Duration (sec)
150
1.2
10
-1
0.10
0.08
0.06
0.04
0.02
0.00
50
40
30
20
10
0.01
0
0
On-Resistance vs. Gate-to-Source Voltage
V
2
GS
0.10
1
- Gate-to-Source Voltage (V)
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
4
Time (sec)
- T
t
A
1
= P
t
2
1.00
DM
S-03951—Rev. B, 26-May-03
I
6
Z
D
Document Number: 70749
thJA
thJA
= 4.6 A
t
t
1
2
(t)
10
= 50_C/W
8
10.00
30
10
Datasheet pdf - http://www.DataSheet4U.net/