SI4482DY Vishay, SI4482DY Datasheet - Page 2

• Manufacturer Part Number: SI4482DY
• Description: N-Channel 100-V (D-S) MOSFET
• Manufacturer: Vishay

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Notes
a.
b.
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2-2
Si4482DY
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
For design aid only; not subject to production testing.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
a
Parameter
b
b
b
b
b
J
= 25_C UNLESS OTHERWISE NOTED)
Symbol
V
r
r
I
DS(
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
R
t
SD
t
t
rr
fs
gs
gd
r
f
g
g
)
V
V
I
DS
DS
D
^ 1 A, V
I
= 50 V, V
= 100 V, V
F
V
V
V
V
V
V
V
V
DS
= 2.1 A, di/dt = 100 A/ms
I
V
DS
DS
Test Condition
S
DS
DD
DD
DS
GS
GS
= 2.1 A, V
= 0 V, V
= V
= 100 V, V
= 15 V, I
= 5 V, V
= 50 V, R
= 50 V, R
= 10 V, I
= 6 V, I
GEN
GS
GS
GS
, I
= 10 V, R
= 10 V, I
GS
D
= 0 V, T
GS
D
D
D
GS
= 250 mA
L
L
GS
= 4.0 A
= "20 V
= 4.6 A
= 4.6 A
= 50 W
= 50 W
= 10 V
= 0 V
= 0 V
D
J
G
= 4.6 A
= 55_C
= 6 W
Min
20
2
1
Typ
0.045
0.050
7.5
20
30
13
12
60
25
50
7
S-03951—Rev. B, 26-May-03
a
Document Number: 70749
Max
"100
0.060
0.080
1.2
4.4
20
50
25
25
90
40
80
1
Unit
nA
mA
mA
nC
ns
W
W
W
V
A
S
V
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