STD4NC50 ST Microelectronics, Inc., STD4NC50 Datasheet

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STD4NC50

Manufacturer Part Number
STD4NC50
Description
N-channel 500V - 1.3 Ohm - 3.7A - Ipak/dpak Powermesh MOSFET
Manufacturer
ST Microelectronics, Inc.
Datasheet

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DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
August 2001
STD4NC50
STD4NC50-1
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
SWITH MODE LOW POWER SUPPLIES
(SMPS)
HIGH CURRENT, HIGH SPEED SWITCHING
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
Symbol
dv/dt(1)
I
V
DM
P
V
V
T
DGR
I
I
TOT
T
stg
DS
GS
D
D
TYPE
j
(*)
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 1.3
500V
500V
V
II is the evolution of the first
DSS
R
N-CHANNEL 500V - 1.3 - 3.7A DPAK/IPAK
<1.5
<1.5
DS(on)
C
™.
GS
Parameter
= 25°C
GS
= 20 k )
The layout re-
= 0)
C
C
= 25°C
= 100°C
3.7A
3.7A
I
D
(1)I
SD
(NO SUFFIX)
3.7A, di/dt 100A/µs, V
INTERNAL SCHEMATIC DIAGRAM
PowerMesh™II MOSFET
DPAK
1
3
–65 to 150
STD4NC50-1
Value
DD
14.8
500
500
±30
150
3.7
2.3
0.4
50
3
STD4NC50
V
(BR)DSS
(SUFFIX“-1”)
, T
IPAK
j
T
JMAX.
1
2
3
W/°C
V/ns
Unit
°C
°C
W
V
V
V
A
A
A
1/9

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STD4NC50 Summary of contents

Page 1

... R I DS(on) D <1.5 3.7A <1.5 3.7A ™. The layout re- Parameter = 25° 100° 25°C C (1)I SD STD4NC50 STD4NC50-1 PowerMesh™II MOSFET 3 1 IPAK DPAK (NO SUFFIX) (SUFFIX“-1”) INTERNAL SCHEMATIC DIAGRAM Value 500 500 ±30 3.7 2.3 14.8 50 0.4 3 –65 to 150 150 3.7A, di/dt 100A/µ ...

Page 2

... STD4NC50/-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ° ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ...

Page 3

... 10V G GS (see test circuit, Figure 5) Test Conditions I = 3.7A 3.7A, di/dt = 100A/µ 100V 150° (see test circuit, Figure 5) Thermal Impedence STD4NC50/-1 Min. Typ. Max. Unit 11 Min. Typ. Max. Unit ...

Page 4

... STD4NC50/-1 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/9 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STD4NC50/-1 5/9 ...

Page 6

... STD4NC50/-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4.40 H 9.35 L2 0 inch MAX. MIN. TYP. 2.40 0.087 1.10 0.035 0.23 0.001 0.90 0.025 5.40 0.204 0.60 0.018 0.60 0.019 6.20 0.236 6.60 0.252 4.60 0.173 10.10 0.368 0.031 1.00 0.024 STD4NC50/-1 MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 0.039 o 0 P032P_B 7/9 ...

Page 8

... STD4NC50/-1 DIM. MIN. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 0.8 L2 8/9 TO-251 (IPAK) MECHANICAL DATA mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 0 inch MIN. TYP. MAX. 0.086 0.094 0.035 0.043 0.027 0.051 0.025 0.031 0.204 0.212 0.033 0.012 0.037 0.017 0.023 0.019 0.023 ...

Page 9

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