STD6NK50Z ST Microelectronics, Inc., STD6NK50Z Datasheet - Page 2

no-image

STD6NK50Z

Manufacturer Part Number
STD6NK50Z
Description
N-channel 500V - 0.98 Ohm - 5.6A TO-220 / TO-220FP / Dpak Zener-protected SUPERMESH%99POWER MOSFET
Manufacturer
ST Microelectronics, Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD6NK50Z
Manufacturer:
ST
0
Part Number:
STD6NK50ZT4
Manufacturer:
STMicroelectronics
Quantity:
135
Part Number:
STD6NK50ZT4
Manufacturer:
ST
Quantity:
220
STP6NK50Z - STF6NK50Z - STD6NK50Z
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) I
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
(#) When mounted on minimum Footprint
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/9
V
Rthj-case
Rthj-amb
Symbol
Symbol
Symbol
dv/dt (1)
SD
BV
ESD(G-S)
I
V
DM
P
V
V
V
E
T
I
DGR
TOT
I
I
AR
ISO
T
T
stg
DS
GS
AS
GSO
D
D
6A, di/dt 200A/µs, V
j
l
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Gate-Source Breakdown
Voltage
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Operating Junction Temperature
Storage Temperature
Parameter
DD
j
= 25 °C, I
V
(BR)DSS
Parameter
D
C
GS
, T
= I
= 25°C
GS
j
j
= 20 k )
max)
AR
Parameter
T
= 0)
, V
JMAX.
DD
C
C
Igs=± 1mA (Open Drain)
= 25°C
= 100°C
= 50 V)
Test Conditions
STD6NK50Z
STP6NK50Z
TO-220
22.4
0.72
DPAK
5.6
3.5
90
1.39
62.5
-
Min.
-55 to 150
-55 to 150
30
Value
3000
± 30
500
500
4.5
300
Max Value
220
Typ.
6
STF6NK50Z
TO-220FP
22.4 (*)
5.6 (*)
3.5 (*)
2500
0.2
100
25
5
Max.
W/°C
°C/W
°C/W
Unit
V/ns
Unit
Unit
mJ
°C
°C
°C
W
V
V
V
A
A
A
V
V
A
V

Related parts for STD6NK50Z