STD7NS20 ST Microelectronics, Inc., STD7NS20 Datasheet - Page 3

• Manufacturer Part Number: STD7NS20
• Description: N-channel 200V - 0.35 Ohm - 7A - Dpak/ipak Mesh Overlay MOSFET
• Manufacturer: ST Microelectronics, Inc.

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
SD
r(Voff)
d(on)
Q
Q
RRM
I
2. Pulse width limited by safe operating area.
Q
Q
SD
t
t
t
t
rr
gs
gd
c
r
f
g
rr
(1)
(2)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
V
R
(see test circuit, Figure 3)
V
V
V
R
(see test circuit, Figure 5)
I
I
V
(see test circuit, Figure 5)
SD
SD
DD
DD
GS
clamp
DD
G
G
= 4.7
= 4.7
= 7 A, V
= 7 A, di/dt = 100A/µs
= 100 V, I
= 160V, I
= 10V
= 50V, T
Test Conditions
Test Conditions
= 160 V, I
Test Conditions
V
V
GS
GS
j
GS
D
D
= 150°C
= 0
= 18 A,
= 10 V
= 3.5 A
= 10V
D
= 7 A,
Min.
Min.
Min.
STD7NS20 / STD7NS20-1
Typ.
Typ.
Typ.
0.95
170
7.5
10
15
31
12
12
25
11
9
Max.
Max.
Max.
1.5
45
28
7
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
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