BAP55L Philips Semiconductors (Acquired by NXP), BAP55L Datasheet - Page 2

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BAP55L

Manufacturer Part Number
BAP55L
Description
Manufacturer
Philips Semiconductors (Acquired by NXP)
Datasheet

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Philips Semiconductors
4. Marking
5. Limiting values
6. Thermal characteristics
7. Characteristics
9397 750 14811
Preliminary data sheet
Table 3:
Table 4:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5:
Table 6:
T
Type number
BAP55L
Symbol
V
I
P
T
T
Symbol
R
Symbol Parameter
V
I
C
r
F
R
D
j
stg
j
R
tot
F
th(j-sp)
d
= 25 C unless otherwise specified.
forward voltage
reverse current
diode capacitance
diode forward
resistance
Marking
Limiting values
Thermal characteristics
Characteristics
Parameter
thermal resistance from junction
to soldering point
Parameter
reverse voltage
forward current
total power dissipation
storage temperature
junction temperature
Rev. 01 — 5 April 2005
Conditions
I
V
V
f = 1 MHz;
F
f = 100 MHz;
R
R
V
V
V
I
I
I
I
= 50 mA
F
F
F
F
= 20 V
= 50 V
R
R
R
= 0.5 mA
= 1 mA
= 10 mA
= 100 mA
= 0 V
= 1 V
= 20 V
Figure 2
Conditions
T
Figure 1
s
= 90 C
Conditions
Marking code
E6
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Min
-
-
-
65
65
Min
-
-
-
-
-
-
-
-
-
-
Max
50
100
500
+150
+150
Typ
100
Typ
0.95
-
-
0.27
0.23
0.18
3.4
2.3
0.8
0.4
Silicon PIN diode
BAP55L
Max
1.1
10
0.1
-
-
0.28
4.5
3.3
1.2
0.7
Unit
V
mA
mW
Unit
K/W
C
C
Unit
V
nA
pF
pF
pF
A
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