TLE4216G Siemens Semiconductor Group, TLE4216G Datasheet - Page 5

• Manufacturer Part Number: TLE4216G
• Description: Intelligent Sixfold Low-Side Switch
• Manufacturer: Siemens Semiconductor Group

TLE 4216 G
Circuit Description
Input Circuits
The control inputs and the preferred-state input consist of TTL-compatible Schmitt
triggers with hysteresis. Driven by these stages the buffer amplifiers convert the logic
signal necessary for driving the NPN power transistors.
Switching Stages
The output stages consist of NPN power transistors with open collectors. Each stage has
its own protective circuit for limiting power dissipation and shorted-load current, which
makes the outputs shorted-load protected to the supply voltage throughout the operating
range. Integrated Z-diodes limit positive voltage spikes that occur when inductive loads
are discharged.
Monitoring and Protective Functions
Each output is monitored in its activated status for overload. Furthermore, large parts of
the circuitry are shutdown (control, output stages). The information from these
malfunctions is ORed and applied to the status output. If several malfunctions appear
simultaneously, the highest voltage level will dominate. The IC is also protected against
thermal overload. If a chip temperature of typically 160 C is reached, overtemperature
is signalled on the status output. If the temperature continues to increase, all outputs are
turned off at 170 C.
If the minimum supply voltage for functioning is not maintained, the output stages
become inactive. At a supply voltage of 2 to 4 V, the outputs are switched to a preferred
state regardless of the level on pin PREFST. If the preferred state is to be maintained
beyond this range, pin PREFST must be switched to low potential. Above a supply
voltage of typical 3 V (max. 4 V) the preferred state is controlled by pin PREFST. From
4 to 5.2 V the logic operation of the outputs is guaranteed, but the status output cannot
be evaluated. At a supply voltage of 5.2 to 30 V the full function is guaranteed.
Semiconductor Group
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