FLX207MH-12 Eudyna Devices, FLX207MH-12 Datasheet

FLX207MH-12

Manufacturer Part Number

FLX207MH-12

Description

Ku Band Power GaAs FET

Manufacturer

Eudyna Devices

Datasheet

1.FLX207MH-12.pdf (4 pages)

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Bonase Electronics (HK) Co., Limited

Part Number:

FLX207MH-12

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Bonase Electronics (HK) Co., Limited

Part Number:

FLX207MH-12*1

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DESCRIPTION

The FLX207MH-12 is a power GaAs FET that is designed for general

purpose applications in the X-Band frequency range as it provides

superior power, gain, and efficiency.

Fujitsu’s stringent Quality Assurance Program assures the highest

reliability and consistent performance.

Edition 1.1

August 1999

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:

FEATURES

• High Output Power: P 1dB = 32.5dBm(Typ.)

• High Gain: G 1dB = 7.0dB(Typ.)

• High PAE: η add = 28%(Typ.)

• Proven Reliability

• Hermetic Metal/Ceramic Package

CASE STYLE: MH

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

Thermal Resistance

Saturated Drain Current

Transconductance

Pinch-off Voltage

Gate Source Breakdown Voltage

Output Power at 1dB G.C.P.

Power Gain at 1dB G.C.P.

Power-added Efficiency

1. The drain-source operating voltage (V DS ) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 17.8 and -1.0 mA respectively with

3. The operating channel temperature (T ch ) should not exceed 145°C.

gate resistance of 250Ω.

Item

Symbol

V GSO

G 1dB

I DSS

P 1dB

η add

Symbol

R th

g m

V p

V GS

V DS

T stg

T ch

P T

Channel to Case

V DS = 5V, V GS = 0V

V DS = 5V, I DS = 500mA

V DS = 5V, I DS = 40mA

I GS = -40µA

V DS = 10V,

I DS = 0.6 I DSS (Typ.),

f = 12.5 GHz

Test Conditions

Condition

T c = 25°C

X, Ku Band Power GaAs FET

Min.

31.5

-1.0

FLX207MH-12

6.0

-5

-65 to +175

Rating

12.5

175

Limit

Typ.

32.5

-2.0

800

400

-5

7.0

G.C.P.: Gain Compression Point

1200

Max.

-3.5

°C/W

Unit

dBm

Unit

°C

Related parts for FLX207MH-12

FLX207MH-12 Summary of contents

Page 1

... High PAE: η add = 28%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLX207MH- power GaAs FET that is designed for general purpose applications in the X-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25° ...

Page 2

... FLX207MH- Band Power GaAs FET POWER DERATING CURVE 100 Case Temperature (°C) OUTPUT POWER vs. INPUT POWER f = 12.5GHz I DS ≈ 0.6 I DSS V DS =10V V DS =8. out 28 26 η add Input Power (dBm) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE ...

Page 3

... Download S-Parameters, click here 3 FLX207MH- +90° 14GHz 8 0° .4 14GHz .02 .04 .06 .08 -90° S22 MAG ANG .312 -147.0 .363 -147 ...

Page 4

... FLX207MH- Band Power GaAs FET 2-Ø1.8±0.15 (0.071) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ ...

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