MRF6S18060MR1 Freescale Semiconductor, MRF6S18060MR1 Datasheet - Page 14

• Manufacturer Part Number: MRF6S18060MR1
• Description: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
• Manufacturer: Freescale Semiconductor

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MRF6S18060MR1 MRF6S18060MBR1
14
Figure 24. Series Equivalent Source and Load Impedance — 1800 MHz
Z
Z
Input
Matching
Network
source
load
1805
1840
1880
MHz
f = 1880 MHz
f
V
= Test circuit impedance as measured from
= Test circuit impedance as measured
DD
Z
= 26 Vdc, I
gate to ground.
from drain to ground.
load
Z
source
4.16 - j7.56
3.89 - j7.40
3.56 - j7.21
Z
f = 1805 MHz
f = 1880 MHz
source
DQ
Device
Under Test
Z
Ω
o
= 600 mA, P
= 10 Ω
Z
f = 1805 MHz
out
load
Z
= 65 W CW
source
3.29 - j4.91
3.10 - j4.69
2.88 - j4.45
Z
load
Ω
Output
Matching
Network
Freescale Semiconductor
RF Device Data