MRF6S18060MR1 Freescale Semiconductor, MRF6S18060MR1 Datasheet - Page 16

• Manufacturer Part Number: MRF6S18060MR1
• Description: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
• Manufacturer: Freescale Semiconductor

www.datasheet4u.com
MRF6S18060MR1 MRF6S18060MBR1
16
D1
NOTE 7
A2
aaa
GATE LEAD
A1
M
4X
b1
c1
C
D3
2X
D2
A
H
4
3
DATUM
PLANE
B
Ç Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç Ç
ZONE J
F
BOTTOM VIEW
E1
E5
E3
E2
E4
E5
2X
2X
2X
E
PACKAGE DIMENSIONS
DRAIN LEAD
MRF6S18060MR1
C
CASE 1486 - 03
TO - 270 WB - 4
PIN 5
SEATING
PLANE
PLASTIC
ISSUE C
1
2
NOTE 8
4X
e
A
A
D
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE
5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR
6. DATUMS −A− AND −B− TO BE DETERMINED AT
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
PER ASME Y14.5M−1994.
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE “b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
DATUM PLANE −H−.
OF THE HEAT SLUG.
STYLE 1:
DIM
aaa
A1
A2
D1
D2
D3
E1
E2
E3
E4
E5
b1
c1
A
D
E
F
e
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
MIN
.100
.039
.040
.712
.688
.600
.551
.353
.132
.124
.270
.346
.164
.007
.011
.025 BSC
.106 BSC
INCHES
.004
Freescale Semiconductor
MAX
.104
.043
.042
.720
.692
.019
.559
.357
.140
.132
.350
.170
.011
− − −
− − −
18.08
17.48
15.24
MILLIMETERS
MIN
2.54
0.99
1.02
0.28
8.97
3.35
3.15
6.86
8.79
4.17
0.18
14
0.64 BSC
2.69 BSC
RF Device Data
0.10
18.29
17.58
MAX
2.64
1.09
1.07
0.48
14.2
9.07
3.56
3.35
8.89
4.32
0.28
− − −
− − −