MRF6S18060MR1 Freescale Semiconductor, MRF6S18060MR1 Datasheet - Page 6

• Manufacturer Part Number: MRF6S18060MR1
• Description: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
• Manufacturer: Freescale Semiconductor

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MRF6S18060MR1 MRF6S18060MBR1
6
17
16
15
14
13
12
1
I
DQ
Figure 5. Power Gain versus Output Power
= 900 mA
750 mA
600 mA
450 mA
300 mA
P
out
, OUTPUT POWER (WATTS)
18
17
16
15
14
13
18
17
16
15
14
13
Figure 3. Power Gain, Input Return Loss and Drain
Figure 4. Power Gain, Input Return Loss and Drain
1900
1900
10
Efficiency versus Frequency @ P
Efficiency versus Frequency @ P
V
f = 1960 MHz
DD
TYPICAL CHARACTERISTICS
1920
1920
= 26 Vdc
η
D
1940
1940
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
η
IRL
D
G
ps
1960
1960
100
G
IRL
ps
1980
1980
V
I
DQ
DD
= 600 mA
= 26 Vdc
out
out
V
I
DQ
17
16
15
14
13
12
DD
= 60 Watts
= 30 Watts
2000
2000
0
= 600 mA
= 26 Vdc
—
12 V
Figure 6. Power Gain versus Output Power
1900 MHz
2020
2020
20
57
55
53
51
49
47
42
40
38
36
34
32
P
out
, OUTPUT POWER (WATTS) CW
16 V
0
0
40
−5
−10
−15
−5
−10
−15
−20
−25
−20
−25
20 V
Freescale Semiconductor
60
24 V
RF Device Data
I
f = 1960 MHz
DQ
26 V
80
= 600 mA
V
DD
= 32 V
100