K3699 Sanyo Semicon Device, K3699 Datasheet

no-image

K3699

Manufacturer Part Number

K3699

Description

Search -----> 2SK3699

Manufacturer

Sanyo Semicon Device

Datasheet

1.K3699.pdf (4 pages)

Current page: 1 of 4
Download datasheet (139Kb)

www.DataSheet4U.com

2SK3699-01MR

Super FAP-G Series

*1 L=22.9mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph

*3 I

FUJI POWER MOSFET

Item

Thermalcharacteristics

Thermal resistance

Drain-source voltage

Continuous drain current

Pulsed drain current

Gate-source voltage

Repetitive or non-repetitive

Maximum Avalanche Energy

Maximum Drain-Source dV/dt

Peak Diode Recovery dV/dt

Max. power dissipation

Operating and storage

temperature range

Isolation Voltage

Item

Drain-source breakdown voltaget

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Forward transcondutance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on time t

Turn-off time t

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Avalanche capability

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

Item

Maximum ratings and characteristic

(Tc=25°C unless otherwise specified)

Electrical characteristics (T

Features

High speed switching

Low on-resistance

No secondary breadown

Low driving power

Avalanche-proof

Applications

Switching regulators

UPS (Uninterruptible Power Supply)

DC-DC converters

F

= <

-I

D

, -di/dt=50A/µs, Vcc BV

off

on

= <

DSS

c

Symbol

=25°C unless otherwise specified)

, Tch 150°C

V

V

I

I

V

I

E

dV

dV/dt

P

T

T

V

D

D(puls]

AR

ch

stg

DSX *5

AS

D

ISO

DS

GS

DS

R

R

Symbol

= <

Symbol

V

V

I

R

g

C

C

C

td

t

td

t

Q

Q

Q

I

V

t

Q

AV

th(ch-a)

Ta=25 °C

Tc=25 °C

GSS

f

th(ch-c)

I

r

rr

/dt

fs

GS(th)

DSS

(BR)DSS

DS(on)

iss

oss

rss

G

GS

SD

(on)

(off)

GD

rr

*6

*1

*2

*4

*3

*4 VDS 900V

Absolute maximum ratings

Ratings

-55 to +150

Test Conditions

V

V

R

Test Conditions

I

I

V

V

V

I

I

V

V

f=1MHz

V

I

V

L=22.9mH T

I

I

-di/dt=100A/µs

channel to ambient

channel to case

D

D

D

F

F

<

D

D

=

+150

2000

CC

GS

GS

DS

DS

GS

DS

GS

CC

GS

=3.7A V

=3.7A V

= 250 µ A

= 250 µ A

=3.7A

=1.85A

=1.85A

900

900

±14.8

±30

171.1

=600V I

=10V

=10

±3.7

40

43

=900V V

=720V V

=±30V

=25V

=0V

=450V

=10V

3.7

5

2.16

N-CHANNEL SILICON POWER MOSFET

*2 Tch 150°C

GS

*5 V

GS

V

V

V

ch

D

=0V T

GS

DS

DS

=0V

GS

GS

=1.85A

V

V

=25°C

GS

GS

DS

=0V

=10V

=25V

=0V

=0V

T

= <

=-30V

=0V

=V

Unit

ch

kV/µs

kV/µs

W

°C

°C

Vrms

=25°C

mJ

V

V

A

A

V

A

ch

GS

=25°C

T

T

ch

ch

*6 f=60Hz, t=60sec.

=125°C

=25°C

TO-220F

Outline Drawings [mm]

Equivalent circuit schematic

Gate(G)

Min.

Min.

900

3.0

2

3.7

Typ.

Typ.

430

60

19

32

17

16.5

3.31

4

3.5

7

6.4

3.7

0.9

1.0

4.0

Source(S)

Drain(D)

Max.

250

100

650

58.0

Max.

25

90

29

48

26

24.8

2.907

11

5.0

4.30

5

9.6

5.6

1.50

Units

Units

200305

°C/W

°C/W

ns

V

V

µA

nA

S

pF

nC

A

V

µs

µC

1

Related parts for K3699

Related keywords

K3699 datasheet
K3699 data sheet
K3699 pdf datasheet
K3699 component
K3699 part
K3699 distributor
K3699 RoHS
K3699 datasheet download