RMBA09500-58 Raytheon RF Components, RMBA09500-58 Datasheet

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RMBA09500-58

Manufacturer Part Number
RMBA09500-58
Description
Circuit Description = Cellular 2 Watt Linear GAAS Mmic Power Amplifier ;; Frequency = 869-894 MHZ
Manufacturer
Raytheon RF Components
Datasheet
RF Components
www.raytheonrf.com
Characteristics
Description
Electrical
Absolute
Features
Ratings
2
The RMBA09500 is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon
RF Components’ pHEMT process. It is designed for use as a driver stage for Cellular base stations, or
as the output stage for Micro- and Pico-Cell base stations. The amplifier has been optimized for high
linearity requirements for CDMA operation.
!
!
!
Notes:
1. Only under quiescent conditions – no RF applied.
2. V
3. 9 Channel Forward Link QPSK Source; 1.23 Mbps modulation rate. CDMA ACPR1 is measured using the ratio of the
4. VG1 and VG2 must be individually adjusted to achieve IDQ1 and IDQ2. A single VGG bias supply adjusted to achieve
5. OIP3 specifications are achieved for power output levels of 27 and 30 dBm per tone with tone spacing of 1.25 MHz at band-
The device requires external input and output matching to 50 Ohms as shown in Figure 3 and the Parts
Parameter
Frequency Ranges
Gain (small signal)
Gain variation:
Noise Figure
Linear output power:
OIP3
Specifications are based on most current or latest revision.
Revised June 27, 2003
Over frequency range
Over temperature range
for CDMA
2 Watt Linear output power at 37 dBc ACPR1 for CDMA
operation
Small Signal Gain of > 30 dB
Small outline SMD package
average power within the 1.23 MHz channel at band center to the average power within a 30 KHz bandwidth at an 885 KHz
offset. Minimum CDMA output power is met with ACPR1 > 37 dBc.
IDQTOTAL=550mA can be used with nearly equivalent performance. Values for IDQ1 and IDQ2 shown have been
optimized for CDMA operation. IDQ1 and IDQ2 (or IDQTOTAL) can be adjusted to optimize the linearity of the amplifier for
other modulation systems.
center with adjusted supply and bias conditions of Vdd=6.0V and Idqtotal=950mA (see Note 4).
List.
RMBA09500-58 - Cellular 2 Watt Linear GaAs
MMIC Power Amplifier
DD
5
= 7.0V, T
3
c
Parameter
Drain Supply Voltage
Gate Supply Voltage
RF Input Power (50 ohm Source) P
Case Operating Temperature
Storage Temperature
= 25°C. Part mounted on evaluation board with input and output matching to 50 Ohms.
Min
869
33
+/-1.5
+/-2.5
Typ
35
43
6
Page 1
1
Max Unit
894 MHz
dB
dB
dB
dB
dBm
dBm
Symbol
V
V
T
T
DD
GS
RF
C
S
Parameter
Idd@33 dBm Pout - 7V
PAE@33 dBm Pout
Input VSWR (50 )
RF Input Power
Drain Voltage (V
Gate Voltages (VG
Quiescent currents (IDQ)
Thermal Resistance
(Channel to Case) Rjc
Min
-30
-40
Max
+10
-5
+5
+85
+100
DD
)
1
,VG
Units
dBm
PRODUCT INFORMATION
2
)
V
V
4
4
C
C
Min
-2
Raytheon RF Components
150, 400
1.15
Typ
2:1
7.0
25
+1
11
Andover, MA 01810
362 Lowell Street
Max Unit
-0.25 Volts
mA
A
%
dBm
Volts
°C/W

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RMBA09500-58 Summary of contents

Page 1

... RMBA09500-58 - Cellular 2 Watt Linear GaAs RF Components MMIC Power Amplifier The RMBA09500 is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon Description RF Components’ pHEMT process designed for use as a driver stage for Cellular base stations the output stage for Micro- and Pico-Cell base stations. The amplifier has been optimized for high linearity requirements for CDMA operation ...

Page 2

... Micro- and Pico-Cell base stations. Figure 1 shows the package outline and the pin designations. Figure 2 shows the functional block diagram of the packaged product. The RMBA09500-58 requires external passive components for DC bias and RF input and output matching circuits as shown in Figure 3 and the Parts List. A recommended schematic circuit is shown in Figure 3 ...

Page 3

... RMBA09500-58 - Cellular 2 Watt Linear GaAs RF Components MMIC Power Amplifier Figure 1 Package Outline and Pin Designations 0.030 Dimensions in inches Figure 2 Functional Block Diagram of Packaged Product Figure 3 Schematic of Application Circuit showing external components www.raytheonrf.com Specifications are based on most current or latest revision. Revised June 27, 2003 TOP VIEW 0 ...

Page 4

... RMBA09500-58 - Cellular 2 Watt Linear GaAs RF Components MMIC Power Amplifier Parts List or Test Evaluation Board (RMBA09500-58-TB, G654188/G654942) The PWB must be prepared with either an embedded copper slug in the board where the package is to Thermal be mounted or a heat sink should be attached to the backside of the PWB where the package Considerations mounted on the front side ...

Page 5

... RMBA09500-58 - Cellular 2 Watt Linear GaAs RF Components MMIC Power Amplifier Figure 4 Layout of Test Evaluation Board (RMBA09500-58-TB, G657471) www.raytheonrf.com Specifications are based on most current or latest revision. Revised June 27, 2003 HS (Heat-sink is attached under base of RMBA09500-58) Page 5 PRODUCT INFORMATION G657471 Raytheon RF Components 362 Lowell Street ...

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