RMBA19500A-58 Raytheon RF Components, RMBA19500A-58 Datasheet

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RMBA19500A-58

Manufacturer Part Number
RMBA19500A-58
Description
Circuit Description = PCS1900 2 Watt GAAS Mmic Power Amplifier ;; Frequency = 1930-1990 MHZ
Manufacturer
Raytheon RF Components
Datasheet
RF Components
www.raytheonrf.com
Characteristics
Description
Absolute
Electrical
Features
Ratings
2
The RMBA19500A-58 is a highly linear Power Amplifier. The two stage circuit uses Raytheon RF
Components’ pHEMT process. It has been designed for use as a driver stage for PCS1900 base
stations, or as the output stage for Micro- and Pico-Cell base stations. The amplifier has been optimized
for high linearity requirements for PCS operation.
Notes:
1. Only under quiescent conditions – no RF applied.
2. V
3. 9 Channel Forward Link QPSK Source; 1.23 Mbps modulation rate. CDMA ACPR1 is measured using the ratio of the
4. OIP3 specifications are achieved for power output levels of 27 and 30 dBm per tone with tone spacing of 1.25 MHz at
5. VG1,2 and VG3 must be individually adjusted to achieve IDQ1,2 and IDQ3. A single VGG bias supply adjusted to
The device requires external input and output matching to 50 Ohms as shown in Figure 3 and the
!
!
!
!
Specifications are based on most current or latest revision.
Revised June 27, 2003
Parameter
Frequency Range
Gain (small signal)
Gain variation:
Noise Figure
P1dB Output
Output Power @ CDMA
average power within the 1.23 MHz channel at band center to the average power within a 30 KHz bandwidth at an 885
KHz offset. Minimum CDMA output power is met with ACPR1 > 36 dBc.
band-center with adjusted supply and bias conditions of Vdd=6.5V and IdqTotal=625mA (see Note 5).
achieve IDQTOTAL=625mA can be used with nearly equivalent performance. Values for IDQ1,2 and IDQ3 shown have
been optimized for CDMA operation. IDQ1,2 and IDQ3 (or IDQTOTAL) can be adjusted to optimize the linearity of the
amplifier for other modulation systems.
Parts List.
Over frequency range
Over temperature range
RMBA19500A-58
PCS1900 2 Watt GaAs MMIC Power Amplifier
Over 1930-1990 MHz
DD
2 Watt linear output power at 36 dBc ACPR1 for CDMA operation
OIP3 43 dBm at 27 and 30 dBm output
Small Signal Gain of >30 dB
Small outline SMD package
= 7.0V, T
c
Parameter
Drain Supply Voltage
Gate Supply Voltage (max absolute value)
RF Input Power (from 50 source)
Operating Case Temperature Range
Storage Temperature Range
= 25°C. Part mounted on evaluation board with input and output matching to 50 Ohms.
3
1930
Min
30
33
+/- 1.0
+/- 1.5
Typ
30
1
6
Page 1
1990 MHz
Max Unit
dBm
dBm
dB
dB
dB
dB
Symbol
Tstg
Pin
Parameter
PAE@33 dBm Pout
OIP3
Drain Voltage (Vdd)
Gate Voltage
Thermal Resistance
Vd
Vg
Tc
Quiescent currents
(Idq1,2 and Idq3)
(Channel to Case)
(VG1,2 and VG3)
4
-40 to +100
-30 to +85
Value
+10
+5
-5
5
5
PRODUCT INFORMATION
Min
Rjc
43
-2
Volts
Volts
dBm
Unit
Raytheon RF Components
°C
°C
180,
Typ
7.0
445
24
45
11
Andover, MA 01810
362 Lowell Street
-0.25 Volts
Max Unit
°C/W
Volts
dBm
mA
%

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RMBA19500A-58 Summary of contents

Page 1

... RMBA19500A-58 RF Components PCS1900 2 Watt GaAs MMIC Power Amplifier The RMBA19500A- highly linear Power Amplifier. The two stage circuit uses Raytheon RF Description Components’ pHEMT process. It has been designed for use as a driver stage for PCS1900 base stations the output stage for Micro- and Pico-Cell base stations. The amplifier has been optimized for high linearity requirements for PCS operation ...

Page 2

... Micro- and Pico-Cell base stations. Figure 1 shows the package outline and the pin designations. packaged product. The RMBA19500A-58 requires external passive components for DC bias and RF input and output matching circuits as shown in Figure 3 and the Parts List. A recommended schematic circuit is shown in Figure 3 ...

Page 3

... RMBA19500A-58 RF Components PCS1900 2 Watt GaAs MMIC Power Amplifier Figure 2 Functional Block Diagram Figure 3 Schematic of Application Circuit showing external components www.raytheonrf.com Specifications are based on most current or latest revision. Revised June 27, 2003 Vd1 Pin Pin# 7 Vg1 Pin# 6 Page 3 PRODUCT INFORMATION Vd2 GND ...

Page 4

... Step 4: Adjust Vgg3 up from -3V until the drain www.raytheonrf.com Specifications are based on most current or latest revision. Revised June 27, 2003 HS (Heat-sink is attached under base of RMBA19500A-58) GND Vg1,2 GND GND board for the ground of the DC supplies. Set Vgg1, 2 and Vgg3 to -4V (pinch-off the board terminal Vdd ensuring that there is no short ...

Page 5

... Heat Sinking the thermally conductive material such as copper or aluminum. The slug should be at least the same RMBA19500A-58 thickness as the PWB. In the case of the heat sink, a small pedestal should protrude through a hole in the PWB where the package bottom is directly soldered. In either configuration, the top surface of the slug or the pedestal should be made coplanar with the package lead mounting plane i.e., the top surface of the PWB. Use Sn96 solder (96.5% Sn and 3.5% Ag) at 220º ...

Page 6

... RMBA19500A-58 RF Components PCS1900 2 Watt GaAs MMIC Power Amplifier Performance Data OIP3 (dBm) Gain (dB) www.raytheonrf.com Specifications are based on most current or latest revision. Revised June 27, 2003 RMBA19500A OIP3 vs Power Output per Tone 48.5 48 47.5 47 46.5 46 45.5 45 44 Output Power per Tone (dBm) Gain vs Power Output per Tone 1 ...

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