RMPA2451-58 Raytheon RF Components, RMPA2451-58 Datasheet

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RMPA2451-58

Manufacturer Part Number
RMPA2451-58
Description
Circuit Description = 2.4-2.5 GHZ GAAS Mmic Power Amplifier ;; Frequency = 2.4-2.5 GHZ
Manufacturer
Raytheon RF Components
Datasheet
# 425430398
www.raytheonrf.com
Characteristics
Description
Absolute
Electrical
Features
Ratings
1
Raytheon RF Components’ RMPA2451-58 is a partially matched monolithic power amplifier in a
surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The
amplifier may be biased for linear, class AB or class F for high efficiency applications. External
matching components are required to optimize the RF performance. The MMIC chip design utilizes
Raytheon RF Components’ 0.25µm power Pseudomorphic High Electron Mobility (PHEMT) process.
Notes:
1. Production Testing includes Gain, Output Power at 1-dB gain compression (P1dB) and Input Return Loss at Vd1 = Vd2 =
2. Two tone 3rd order Output Intermodulation products (IM3) are measured with total output power level of 25dBm (tone
3. Vg1, Vg2 tied together. Vd = 5V until Idq total = 45 mA, Pin = -10 dBm.
Other Parameters are guaranteed by Design Validation Testing (DVT).
Characteristic performance data and specifications are subject to change
without notice.
Revised August 5, 2002
Parameter
Frequency Range
Gain
Output Power, P1dB
Power Added
+5.0V; Vg1,Vg2 = -0.5V (nominal), adjust Vg1 and Vg2 to get Idq1 = 60 mA, Idq2 = 340 mA and at F = 2.45 GHz, at 25
spacing is 1MHz).
RMPA2451-58
2.4-2.5 GHz GaAs MMIC
Power Amplifier
Efficiency
38% Power Added Efficiency
29 dBm Typical Output Power
Small package outline: 0.28”x 0.28”x 0.07”
Low Power Mode: 0 dBm
1
Parameter
Positive Drain DC Voltage
Negative Gate DC Voltage
Simultaneous Drain to Gate Voltage
RF Input Power (from 50
Drain Current, First Stage
Drain Current, Second Stage
Gate Current
Channel Temperature
Operating Case Temperature
Storage Temperature Range
Thermal Resistance (Channel to Case)
1
Min
2400
28.5
27
Typ
33
29
38
Page 1
source)
2500
Max
Unit
MHz
dB
dBm
%
Symbol
Vd1,Vd2
Vg1,Vg2
Tcase
Vd-Vg
Tstg
Pin
Id1
Id2
Rjc
Tc
Ig
Parameter
3rd order Intermod.
Drain Current (Id1 + Id2)
Gate Current (Ig1 + Ig2)
Input Return Loss (50W)
Low Power Mode, Pout
Product
2
Min
-40
-40
-5
0
3
PRODUCT INFORMATION
Min
0
Max
+10
+10
525
175
125
+8
75
85
33
0
5
Raytheon RF Components
Typ
430
-35
2:1
Andover, MA 01810
Units
Volts
Volts
Volts
dBm
mA
mA
mA
°C
°C
°C
°C/Watt
362 Lowell Street
Max Unit
-27
5
dBm
dBc
mA
mA
dB
0
C.

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RMPA2451-58 Summary of contents

Page 1

... GHz GaAs MMIC Power Amplifier Raytheon RF Components’ RMPA2451- partially matched monolithic power amplifier in a Description surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The amplifier may be biased for linear, class AB or class F for high efficiency applications. External matching components are required to optimize the RF performance. The MMIC chip design utilizes Raytheon RF Components’ ...

Page 2

... The package outline, along with the pin designations, is provided as Figure 1. The functional block diagram of the packaged product is provided as Figure 2. It should be noted that the RMPA2451-58 requires the use of external passive components to form the DC bias and RF output matching circuits. The schematic for a recommended DC bias / RF matching circuit is shown in Figure 3, along with a list of the appropriate components ...

Page 3

... Figure 2 and 4. Test Procedure V ‹ gg1 for the evaluation board V ‹ dd1 (RMPA2451-58-TB) V and V ‹ and V d1 CAUTION: LOSS OF GATE VOLTAGES (VG1, VG2) WHILE DRAIN VOLTAGES (VD1, VD2) ARE PRESENT MAY DAMAGE THE AMPLIFIER. The following sequence of procedures must be followed to properly test the amplifier: Step 1: Turn the RF power OFF ...

Page 4

... RMPA2451-58 # 425430398 2.4-2.5 GHz GaAs MMIC Power Amplifier Figure 4 Layout of Evaluation Board (RMPA2451-58- RF Input TB) Parts List for Test Evaluation Board Characteristic performance data and specifications are subject to change www.raytheonrf.com without notice. Revised August 5, 2002 gg1 Part ...

Page 5

... RMPA2451-58 # 425430398 2.4-2.5 GHz GaAs MMIC Power Amplifier Figure 5 Typical Gain and P1dB performance across bandwidth over temperature -50 NB: Gain measured at P Figure 6 Typical third-order intermodulation product variation over temperature -50 Characteristic performance data and specifications are subject to change www.raytheonrf.com without notice. Revised August 5, 2002 Variation In Gain & ...

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