RMPA2451-58 Raytheon RF Components, RMPA2451-58 Datasheet - Page 3

• Manufacturer Part Number: RMPA2451-58
• Description: Circuit Description = 2.4-2.5 GHZ GAAS Mmic Power Amplifier ;; Frequency = 2.4-2.5 GHZ
• Manufacturer: Raytheon RF Components

# 425430398
www.raytheonrf.com
(RMPA2451-58-TB)
Test Procedure
recommended DC
bias/ RF matching
evaluation board
Schematic of a
Figure 3
for the
circuit
CAUTION: LOSS OF GATE VOLTAGES (VG1, VG2) WHILE DRAIN VOLTAGES (VD1, VD2) ARE
PRESENT MAY DAMAGE THE AMPLIFIER.
The following sequence of procedures must be followed to properly test the amplifier:
It is important that the following points be noted prior to testing; Pin designations are as shown in
‹
‹
‹
‹
Step 1: Turn the RF power OFF.
Step 2: Use the GND terminals of the evaluation
Step 3: Apply a nominal voltage of approximately -
Step 4: Apply a nominal voltage of +5.0V to the
Step 6: To perform intermodulation product
Characteristic performance data and specifications are subject to change
without notice.
Step 5: Apply an RF signal within the ISM
Revised August 5, 2002
RMPA2451-58
2.4-2.5 GHz GaAs MMIC
Power Amplifier
Figure 2 and 4.
V
V
V
V
gg1
dd1
g1
d1
and V
and V
and V
and V
board for the ground of the DC supplies.
3.0V to both V
V
second stage quiescent Drain current, I
of 340 mA.. Adjust V
stage quiescent Drain current, I
60mA..
frequency range (2.4 - 2.5 GHz) at an
initial input power level of -10 dBm.
measurements, a second RF signal
generator
dd
terminals. Adjust V
g2
d2
RF Input
gg2
dd2
are the negative Gate bias voltages applied at the pins of the package.
are the positive Drain bias voltages applied at the pins of the package.
are the negative Gate bias voltages applied at the pins of the evaluation test board.
are the positive Drain bias voltages applied at the pins of the evaluation test board.
gg1
C
3
and V
V
gg1
gg1
gg2
gg2
to give a first
L
Page 3
to provide a
2
terminals.
C
2
d1
of
V
RMPA2451
PPYYWWX
C
Raytheon
dd1
1
dd2
C
1
,
C
2
Step 7: To operate at lower quiescent Drain
Step 8: When turning the amplifier OFF, the
C
C
1
2
V
required, along with an appropriate
power combiner. The test configuration
should allow this additional generator to
provide the same input power level as
the first generator into the device.
Intermodulation readings may then be
made at the required total output power
levels.
currents, increase the magnitudes of
V
to operate at higher quiescent Drain
currents, the magnitudes of V
V
power-up sequence should be reversed.
gg2
with a frequency difference of 1 MHz is
gg1
gg2
C
and V
should be decreased accordingly.
1
L
C
1
3
gg2
C
4
PRODUCT INFORMATION
as required, alternatively
C
2
RF Output
V
dd2
Raytheon RF Components
Andover, MA 01810
362 Lowell Street
gg1
and