TPCP8401 Toshiba Semiconductor, TPCP8401 Datasheet

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TPCP8401

Manufacturer Part Number
TPCP8401
Description
Field Effect Transistor Silicon MOS Type
Manufacturer
Toshiba Semiconductor
Datasheet
○ Switching Regulator Applications
○ Load Switch Applications
Absolute Maximum Ratings
P-ch
High forward transfer admittance
Lead(Pb)-Free
Multi-chip discrete device; built-in P channel MOS FET for main
switch and N Channel MOS FET for drive
Small footprint due to small and thin package
Low drain-source ON resistance
: P Channel R
Low drain-source ON resistance
: P Channel |Y
Low leakage current
: P Channel I
Enhancement−mode
: P Channel V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation
Drain power dissipation
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Channel temperature
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS Ⅲ / π-MOS Ⅵ)
Characteristics
DSS
DS (ON)
th
fs
= −0.5 to −1.2 V (V
| = 13 S (typ.)
(Note 2a) (Note 4)
= −10 µA (V
GS
DC
Pulse (Note 1)
= 20 kΩ)
= 31 mΩ (typ.)
(Note 2a)
(Note 2b)
(Note 1)
(Note 3)
(t = 5 s)
(t = 5 s)
DS
= −12 V)
DS
(Ta = 25°C)
Symbol
V
V
V
TPCP8401
E
E
= −10 V, I
I
I
T
P
P
DGR
GSS
DSS
I
DP
AR
AR
AS
D
ch
D
D
D
= −200 µA)
Rating
−22.0
−5.5
1.96
−2.8
0.22
−12
−12
150
1.0
5.3
±8
1
Unit
mJ
mJ
°C
W
W
V
V
V
A
A
Weight: 0.017 g (typ.)
Circuit Configuration
Marking
JEDEC
JEITA
TOSHIBA
1.Source(Nch)
2.Drain(Pch)
3.Drain(Pch)
4.Drain(Pch)
0.475
8
S
1
8
1
0.33±0.05
8
1
8401
0.65
0.025
7
(Note5)
2.9±0.1
2
2
0.17±0.02
5.Gate(Pch)
6.Source(Pch)
7.Gate(Nch)
8.Drain(Nch)
7
0.05
S
www.DataSheet4U.com
M
2-3V1G
6
TPCP8401
5
4
Lot No.
A
3
2006-11-13
6
3
B
0.28
1.12
1.12
0.28
A
0.8±0.05
5
Unit: mm
+0.1
+0.13
+0.13
+0.1
-0.11
-0.12
-0.12
-0.11
0.05
4
5
4
M
B

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TPCP8401 Summary of contents

Page 1

... V V DGR ± GSS −5 − −2 0. 150 ° TPCP8401 www.DataSheet4U.com Unit: mm 0.33±0. 0.475 0.05 M 0.65 2.9±0.1 A 0.8±0.05 0.025 S S +0.1 0.28 0.17±0.02 -0.11 +0.13 1.12 -0.12 +0.13 1.12 -0.12 5.Gate(Pch) 1.Source(Nch) +0.1 0.28 -0.11 2.Drain(Pch) 6.Source(Pch) 3.Drain(Pch) 7. ...

Page 2

... Symbol Rating Unit DSS ± GSS 150 ° 0. 150 °C ch (Ta=25°C ) Symbol Rating Unit −55~150 T °C stg Symbol Max Unit R 63.8 °C/W th (ch-a) R 125 °C/W th (ch- Ω −2. TPCP8401 www.DataSheet4U.com 2006-11-13 ...

Page 3

... −5 gs1 Q gd (Ta = 25°C) Symbol Test Condition ⎯ I DRP = −5 DSF 3 TPCP8401 www.DataSheet4U.com Min Typ. Max Unit ⎯ ⎯ ±10 µA ⎯ ⎯ −10 µA −12 ⎯ ⎯ V −4 ⎯ ⎯ −0.5 ⎯ ...

Page 4

... Duty < µ iss MHz rss C oss requires a higher voltage than V GS (on) recommended voltage for turning on this GS 4 TPCP8401 www.DataSheet4U.com Min Typ. Max Unit ⎯ ⎯ ±1 µA ⎯ ⎯ 1 µA ⎯ ⎯ ⎯ ...

Page 5

... A 0 −2 −2.5 −2 0 (V) Gate-source voltage V 1 0.3 0.1 0.03 0.01 −30 −100 −0.1 −0.3 5 TPCP8401 www.DataSheet4U.com I – Common source − 25°C Pulse test −3 −1.9 −5 −4 −1.8 −1.7 −1 −1.4 V −2 −3 −4 −5 (V) ...

Page 6

... Ta = 25°C −16 Pulse test −2.5 V − −10 V −8 −5 −4 −2 160 Total gate charge Q 6 TPCP8401 www.DataSheet4U.com – Common source Ta = 25°C Pulse test 1.2 1.6 2.0 (V) DS – Common source − −200 µA ...

Page 7

... Drain-source voltage V ( – Device mounted on a glass- epoxy board (a) (Note 2a) Single pulse 0 100 Pulse width t (s) w −100 7 TPCP8401 www.DataSheet4U.com 1000 2006-11-13 ...

Page 8

... Gate-source voltage V 2 Common source 0 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 −25 125 150 0 Ambient temperature Ta (°C) 8 TPCP8401 www.DataSheet4U.com I – −25° ( – (ON) GS Common source 100°C 25°C −25° (V) ...

Page 9

... Drain-source voltage V t – I 5000 3000 t off 1000 500 t f 300 100 100 10 0.1 1 Drain current I 9 TPCP8401 www.DataSheet4U.com – −0.8 −1 −1.2 −1.4 ( Common source 0~2 25°C 10 100 (mA) D 2006-11-13 ...

Page 10

... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 10 TPCP8401 www.DataSheet4U.com 030619EAA 2006-11-13 ...

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