TPCP8401 Toshiba Semiconductor, TPCP8401 Datasheet - Page 8

• Manufacturer Part Number: TPCP8401
• Description: Field Effect Transistor Silicon MOS Type
• Manufacturer: Toshiba Semiconductor

Nch
250
200
150
100
50
12
10
0
8
6
4
2
0
8
7
6
5
4
3
2
1
0
−25
1
0
10
Common source
0
4
Drain-source voltage V
Ambient temperature Ta (°C)
V GS = 1.5 V, I D = 1 mA
V GS = 1.5 V
3
0.5
Drain current I
2.5
25
2.3
10
2.5 V, 10 mA
R
R
DS (ON)
DS (ON)
2.1
I
50
D
2.5 V
4 V
– V
1
DS
75
– Ta
– I
D
4 V, 10 mA
D
100
(mA)
Common source
Ta = 25°C
DS
100
Common source
Ta = 25°C
1.5
V GS = 1.3 V
(V)
125
1.9
1.7
1.5
1000
150
2
8
1000
0.01
100
0.1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
10
−25
1
6
5
4
3
2
1
0
2
1
0
0
0
Common srouce
V DS = 3 V
Common source
I D = 0.1 mA
V DS = 3 V
25°C
0
Gate-source voltage V
Gate-source voltage V
Ambient temperature Ta (°C)
Ta = 100°C
2
25
1
R
DS (ON)
4
−25°C
I
50
V
D
−25°C
th
– V
25°C
Ta = 100°C
– Ta
GS
– V
75
6
GS
Common source
I D = 10 mA
2
GS
GS
100
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(V)
8
(V)
125
TPCP8401
2006-11-13
150
10
3