RB751S-30 Cystech Electonics, RB751S-30 Datasheet - Page 2
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RB751S-30
Manufacturer Part Number
RB751S-30
Description
Small Signal Schottky Diode
Manufacturer
Cystech Electonics
Datasheet
1.RB751S-30.pdf
(3 pages)
Characteristics
Characteristic Curves
RB751S-40C2
Forward Voltage
Reverse Leakage Current
Capacitance Between Terminals
0.001
0.01
100
0.1
10
120
100
1
80
60
40
20
0
0
0
Characteristic
Reverse Leakage Current vs Reverse Voltage
Forward Current Derating Curve
25
Ambient Temperature---T
T a= 25℃
Reverse Voltage---VR(V)
10
50
(Ta=25 C)
T a= 125℃
T a= 75℃
M ounting on glass
epoxy PCBs
Typ. pulse easurement
75
CYStech Electronics Corp.
20
100
A
Symbol
(℃)
Ta=-25℃
V
C
I
R
T
F
125
30
I
V
V
150
F
=1mA
R
R
=30V
=1V, f=1MHz
Condition
0.01
100
0.1
10
10
1
1
0
0
T yp.
pulse measurement
125℃
2
Forward Current vs Forward Voltage
0.1
Capacitance vs Reverse Voltage
Forward Voltage---V
Reverse Voltage---V
4
Min.
0.2
-
-
-
6
CYStek Product Specification
8
Typ
Spec. No. : C345C2
Issued Date : 2003.12.11
Revised Date :
Page No. : 2/3
0.3
2
-
-
R
F
(V)
(V)
10
- 25℃
25℃
75℃
f=1MHz
Ta=25℃
Max.
0.4
370
0.5
-
12
0.5
Unit
14
mV
µA
pF