S2S03H Pacer Components, S2S03H Datasheet

S2S03H

Manufacturer Part Number

S2S03H

Description

Multi Epi-cavity Lasers, Dpga & Tpga Series Ingaas Pulsed Epi-cavity Laser Diodes

Manufacturer

Pacer Components

Datasheet

1.S2S03H.pdf (8 pages)

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Multi EPI-Cavity Lasers,

DPGA & TPGA Series

InGaAs Pulsed Epi-Cavity Laser Diodes

905 nm Multi Active Area (Epitaxially Stacked Multi Quantum Well Strained)

Comparison of the optical Near Field of Laser Diodes with one, two or three Epitaxial Layers.

Overview

The double (DPGA) and triple

(TPGA) EPI-cavity laser device

families employ PerkinElmer’s

novel multi active area laser chips

to deliver high output power in a

small emitting area. The active

areas are monolithically grown

on the GaAs substrate and are

separated by grown separation

regions (tunnel junctions). With

this approach, a doubling or

tripling of the available optical

output power from a single chip

is achieved. This power enhance-

ment comes with only a slight

increase in the near-field trans-

verse active area dimension. This

“EPI-cavity” structure comple-

ments PerkinElmer’s current PGA

series of InGaAs Multi quantum

well single active area product

lines. Similar to the PGA series,

chips of different stripe width

from 75 to 225 µm are available,

which in addition can be physi-

cally stacked to even increase

output power further. A single

triple cavity laser chip TPGA

with 225 µm width has a typical

peak power output of 80 W.

By stacking 3 chips, the output

power raises to 220 W.

The EPI-cavity structure possesses

the same 25º beam divergence in

the perpendicular direction as the

PGA series product lines, as well

w w w. o p t o e l e c t ro n i c s . p e r k i n e l m e r. c o m

as the same excellent stability of

power output over the full MIL

spec temperature range. Slightly

higher forward voltage drops are

experienced due to the additional

active areas and tunnel junctions

in the laser structure.

The structures are fabricated using

metal organic chemical vapour

deposition (MOCVD) in a similar

fashion to the PGA series.

Recognizing that different appli-

cations require different packages,

six standard package options are

available, including the traditional

stud designs as well as 5.6 and

9 mm CD packages and ceramic

substrates. Since pulse widths

have decreased and optical cou-

pling has become important, the

newer packages – boasting reduced

inductance and thinner, flatter

windows – have gained popularity.

Additionally where fiber coupling

applications are concerned, the

transverse spacing of the EPI-

cavity active areas concentrates

more optical power into a smaller

geometry allowing for increased

optical power coupling into opti-

cal fibers.

For pulse widths below 5 ns,

hybridization with integrated

drive circuitry is also available

with PerkinElmer’s MGAD series.

Features and Benefits

Applications

Doubling or tripling of the output

power from a single EPI-cavity chip

with a small active area: Peak power

up to 80 W at 30 A drive current

and 100 ns pulse width.

Peak power >210 W at 30 A drive

current and 100 ns pulse width for 3

physically stacked EPI-cavity chips.

Extremely high reliability.

Experience in EPI-cavity lasers for

military applications since early 1990s.

Range of single element and

stacked devices.

Choice of 6 standard packages.

80% power retention at 85ºC ambient.

Flexibility in customization for

different applications.

Small emitting areas allow ease of

fiber coupling.

Laser range finding.

Laser safety curtains (laser scanning).

Laser speed measurement (LIDAR).

Automotive adaptive cruise control

(ACC).

Material excitation in medical and

other analytical applications.

Weapon simulation.

Related parts for S2S03H

S2S03H Summary of contents

Page 1

Multi EPI-Cavity Lasers, DPGA & TPGA Series InGaAs Pulsed Epi-Cavity Laser Diodes 905 nm Multi Active Area (Epitaxially Stacked Multi Quantum Well Strained) Comparison of the optical Near Field of Laser Diodes with one, two or three Epitaxial Layers. Overview ...

Page 2

... typ 225 1 DPGA DPGA DPGA DPGA S2S03H S2S09H S3S03H S3S09H 140 30 100 45 150 125 225 X 125 75 X 225 225 X 225 1.0 2.2 1.0 2.0 13 ...

Page 3

... TPGAS1S03H min Po 22 min typical Po 23 typ 1 typical typical typical TPGA TPGA TPGA S2S03H S2S09H S3S03H Symbol Po 43 140 65 min Po 45 148 68 typ 175 225 X 175 75 X 350 1.5 ...

Page 4

Package Drawings Package S: Pin out 1. LD Anode (+), 2. LD Cathode (-) Case, Inductance 5.2 nH Package U: Pin out 1. LD Anode (+), 2. NC Cathode (-) Case, Inductance 5.0 nH Package C: Pin ...

Page 5

Package R: Pin out 1. LD Anode (+), 2. NC Cathode (-) Case, Inductance 6.8 nH Package F: Pin out: Case (-), Pin (+), Inductance 11 nH Package Y: Pin out 1. ID Cathode (-), 2. LD Anode ...

Page 6

Figure 1 Peak Radiant Intensity vs. Temperature / Total Peak Radiant Intensity vs. Peak Drive Current Figure 2 Center Wavelength vs. Temperature / Radiant Intensity vs. F Number Figure 3 Radiant Intensity vs. Half Angle / Spectral Plot Distribution 6 ...

Page 7

Figure 4 DPGA Far Field Pattern Parallel to Junction Plane / DPGA Far Field Pattern Perpendicular to Junction Plane Figure 5 TPGA Far Field Pattern Parallel to Junction Plane / TPGA Far Field Pattern Perpendicular to Junction Plane Figure 6 ...

Page 8

For Your Safety Laser Radiation: Under operation, these devices produce invisible electromagnetic radiation that may be harmful to the human eye. To ensure that these laser components meet the requirements of Class IIIb laser products, they must not be ...

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