MP4TD1110 M-pulse Microwave, MP4TD1110 Datasheet

MP4TD1110

Manufacturer Part Number

MP4TD1110

Description

Silicon Bipolar MMIC Cascadable Amplifier

Manufacturer

M-pulse Microwave

Datasheet

1.MP4TD1110.pdf (3 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MP4TD1110

Manufacturer:

M-PulseMicrowave

Quantity:

5 000

Current page: 1 of 3
Download datasheet (78Kb)

www.DataSheet4U.com

M-Pulse Microwave

Features

• High Dynamic Range Cascadable 50Ω/75Ω Gain Block

• 3dB Bandwidth: 50 MHz to 1.3 GHz

• 17.0 dBm Typical P

• 12 dB Typical Gain @ 0.5 GHz

• 3.8 dB Typical Noise Figure @ 1.0 GHz

• Hermetic Gold-Ceramic Microstrip Package

• Tape and Reel Packaging Available

Description

M-Pulse's MP4TD1110 is a high performance silicon

bipolar MMIC housed in a hermetic high reliability

package.

systems where a high dynamic range and low distortion

gain block is required.

narrow and wide band IF and RF amplifiers in industrial

and military applications.

The MP4TD1110 is fabricated using a 10 GHz f T silicon

bipolar technology that features gold metalization and IC

passivation for increased performance and reliability.

Electrical Specifications @ T

M-Pulse Microwave

PH (408) 432-1480

Silicon Bipolar MMIC

Cascadable Amplifier

0.1

Symbol

SWR

dV/dT

TYPICAL POWER GAIN vs FREQUENCY

ΔGp

3dB

1dB

out

The MP4TD1110 is designed for use in

Parameters

Power Gain (

Gain Flatness

3 dB Bandwidth

Input SWR

Output SWR

Output Power @ 1 dB Gain Compression

50 Ω Noise Figure

Third Order Intercept Point

Group Delay

Device Voltage

Device Voltage Temperature Coefficient

Specification Subject to Change Without Notice

FX (408) 432-3440

__________________________________________________________________________________

1dB

FREQUENCY (GHz)

@ 1.0 GHz

Typical applications include

⏐

Id=60mA

= +25°C, I d = 60 mA, Z 0 = 50Ω

21 ⏐ 2

)

f = 0.1 GHz

f = 0.1 to 0.7 GHz

ref 50 MHz Gain

f = 0.1 to 2.0 GHz

f = 0.7 GHz

f = 1.0 GHz

Test Conditions

Gold-Ceramic Microstrip Package Outline

Pin Configuration

Ordering Information

MA4TD1110

MA4TD1110T

Pin Number

2 & 4

Model No.

Notes: (unless otherwise specified)

1. Dimensions are in / mm

2. Tolerance: in .xxx = ±.005; mm .xx = ±.13

.004 ±.002

RF INPUT

0,1±0,05

mV/°C

Units

GHz

dBm

.040

1,02

RF Input

AC/DC Ground

RF Output and DC Bias

12,57 ±0,76

.495 ±.030

.100

2,54

Pin Description

GND

Min.

11.5

16.0

GND

4.5

MP4TD1110

Hermetic Ceramic

Tape and Reel

RF OUT

AND BIAS

Package

Typ.

12.5

±0.8

17.0

30.0

-8.0

160

1.3

1.9

2.1

3.8

5.5

1,2

.020

0,51

.030

0,76

Max.

13.5

±1.0

4.5

6.5

Related parts for MP4TD1110

MP4TD1110 Summary of contents

Page 1

... Typical applications include narrow and wide band IF and RF amplifiers in industrial and military applications. The MP4TD1110 is fabricated using a 10 GHz f T silicon bipolar technology that features gold metalization and IC passivation for increased performance and reliability. TYPICAL POWER GAIN vs FREQUENCY ...

Page 2

... 1dB GAIN COMPRESSION OUT vs FREQUENCY MP4TD1110 Rbias Vcc > 7 (DC Block) OUT ...

Page 3

... MP4TD1110 1 0 Angle -128.3 -130.9 -133.8 -137.2 -141.2 -144.8 -148.6 -152.9 -157.4 -162.1 -166.7 -171.1 -175.2 -178.5 178.9 177.0 175.4 173.9 172.3 170.4 168.1 165.4 162.6 160.0 157.7 155.8 154.1 153.0 152 ...

Related keywords

MP4TD1110 datasheet
MP4TD1110 data sheet
MP4TD1110 pdf datasheet
MP4TD1110 component
MP4TD1110 part
MP4TD1110 distributor
MP4TD1110 RoHS
MP4TD1110 datasheet download