MP4TD1120 M-pulse Microwave, MP4TD1120 Datasheet
MP4TD1120
Manufacturer Part Number
MP4TD1120
Description
Silicon Bipolar MMIC Cascadable Amplifier
Manufacturer
M-pulse Microwave
Datasheet
1.MP4TD1120.pdf
(3 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MP4TD1120
Manufacturer:
M-PULSE
Quantity:
3 000
www.DataSheet4U.com
M-Pulse Microwave
Features
•
•
•
•
•
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Description
M-Pulse's MP4TD1120 is a high performance silicon bipolar
MMIC housed in a hermetic high reliability package.
MP4TD1120 is designed for use in 50Ω or 75Ω systems where
a high dynamic range gain block is required.
applications include narrow and wide band IF and RF
amplifiers in industrial and military applications. The 20 style
package is a superior thermal dissipation package. This allows
larger DC Current and the resultant improvement in ouput
power and P 1dB performance than that available from the
packages for this chip.
The MP4TD1120 is fabricated using a 10 GHz f T silicon bipolar
technology that features gold metalization and IC passivation
for increased performance and reliability.
Electrical Specifications @ T
M-Pulse Microwave
PH (408) 432-1480
Silicon Bipolar MMIC
Cascadable Amplifier
High Dynamic Range Cascadable 50Ω/75Ω Gain Block
3dB Bandwidth: 50 MHz to 1.3 GHz
17.0 dBm Typical P 1dB @ 1.0 GHz
12 dB Typical Gain @ 0.5 GHz
3.8 dB Typical Noise Figure @ 1.0 GHz
Hermetic Gold-BeO Microstrip Package
The 20 package allows higher power operation
Symbol
SWRout
SWRin
P 1 dB
dV/dT
f 3 dB
14
12
10
ΔGp
8
6
4
IP 3
Gp
NF
Vd
t D
0.1
TYPICAL POWER GAIN vs FREQUENCY
Parameters
Power Gain (⏐S 21 ⏐ 2 )
Gain Flatness
3 dB Bandwidth
Input SWR
Output SWR
Output Power @ 1 dB Gain Compression
50 Ω Noise Figure
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
Specification Subject to Change Without Notice
FX (408) 432-3440
__________________________________________________________________________________
FREQUENCY (GHz)
A
1
= +25°C, I d = 60 mA, Z 0 = 50Ω
Id=60mA
Typical
The
10
f = 0.1 GHz
f = 0.1 to 0.7 GHz
ref 50 MHz Gain
f = 0.1 to 1.0 GHz
f = 0.1 to 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
Test Conditions
Gold-BeO Microstrip Package Outline 1,2
Pin Configuration
Ordering Information
MP4TD1120
Pin Number
-
-
Notes: (unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx = ±.005; mm .xx = ±.13
1
2 & 4
3
Model No.
0.003
0.076
3
0.132
5.42
DIA
TYP.
0.30
7.62
mV/°C
Units
GHz
dBm
dBm
dB
dB
dB
ps
2
V
-
-
0.205
RF Input
AC/DC Ground
RF Output and DC Bias
5.21
DIA
BeO Ceramic
4
Pin Description
0.060
1.525
MP4TD1120
-16.0
Min.
11.5
4.5
-
-
-
-
-
-
-
-
Package
1
0.020
0.51
0.030
0.762
Typ.
12.5
±0.8
17.0
30.0
-8.0
160
1.3
1.9
2.1
3.8
5.5
0.053
1.35
Max.
13.5
±1.0
-4.5
6.5
-
-
-
-
-
-
-
1
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MP4TD1120 Summary of contents
Page 1
... DC Current and the resultant improvement in ouput power and P 1dB performance than that available from the packages for this chip. The MP4TD1120 is fabricated using a 10 GHz f T silicon bipolar technology that features gold metalization and IC passivation for increased performance and reliability. ...
Page 2
... RETURN LOSS vs FREQUENCY -11 - -21 -26 0 1dB GAIN COMPRESSION OUT vs FREQUENCY 22 Id=75m Id=60m 0 MP4TD1120 Rbias Vcc > 7 (DC Block) OUT ...
Page 3
... MP4TD1120 10 Angle -117.0 -122.0 -123.6 -126.3 -130.2 -133.7 -137.6 -141.8 -146.1 -150.1 -154.0 -157.1 -159.9 -162.3 -164.8 -167.0 -168.6 -171.5 -173.7 -176.9 -179.4 178.1 176.4 174.4 174.7 173.4 172.2 171.6 169.0 167 ...