AN1827 Freescale Semiconductor / Motorola, AN1827 Datasheet - Page 17

• Manufacturer Part Number: AN1827
• Description: Programming and Erasing FLASH Memory on the MC68HC908AS60
• Manufacturer: Freescale Semiconductor / Motorola

AN1827
MOTOROLA
10. Wait for a time, t
11. Set PGM = 0.
12. Wait for a time, t
13. Read programmed data (margin read process).
14. Compare margin read data with data written in Step 4.
15. Clear the MARGIN bit.
16. Increment attempt counter since programming was not
17. If any byte of programmed data does not match the margin read
5. Set HVEN = 1.
6. Wait for a time, t
7. Set HVEN = 0.
8. Wait for a time, t
9. Set MARGIN = 1.
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Internal high voltage is applied for programming.
t
Internal high voltage is disabled.
Wait for programming voltages to dissipate before margin reading.
This configures the FLASH memory for margin read operation.
Time to discharge the margin read voltage.
This step disables the programming operation.
After a time, t
mode.
This requires separate read operations for each byte.
This requires separate read operations for each byte.
Disable the margin read operation.
successful.
data, then there are two options. If the count is less than the
maximum (fls
same page. If the attempt to program count has reached fls
the programming operation has failed.
Step
is the time high voltage is applied for every program pulse.
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Pulses
HVD
Step
HVTV
VTP
HVD
, the memory can be accessed in normal read
(); return to step 2 to repeat programming of the
.
.
.
.
Page Program/Margin Read Algorithm
Application Note
Pulses
17
,