AN1827 Freescale Semiconductor / Motorola, AN1827 Datasheet - Page 8

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AN1827

Manufacturer Part Number
AN1827
Description
Programming and Erasing FLASH Memory on the MC68HC908AS60
Manufacturer
Freescale Semiconductor / Motorola
Datasheet
Application Note
8
ERASE — Erase Control Bit
PGM — Program Control Bit
There are two FLASH block protect registers, FLBPR1 and FLBPR2, for
FLASH-1 and FLASH-2 arrays, respectively.
BPR3 — Block Protect Register Bit 3
This read/write bit configures the memory for the erase operation.
ERASE is interlocked with the PGM bit such that both bits cannot
be set at the same time.
This read/write bit configures the memory for the program
operation. PGM is interlocked with the ERASE bit such that both
bits cannot be set at the same time.
This bit protects the memory contents in the address range:
Freescale Semiconductor, Inc.
Reset:
Read:
Write:
NV — Non-volatile, 1 if programmed, 0 if erased
DC — Don’t care
For More Information On This Product,
1 = Erase operation selected
0 = Erase operation unselected
1 = Program operation selected
0 = Program operation unselected
1 = Address range protected from erase or program
0 = Address range open to erase or program
$FF80 — FLASH-1 block protect register (FLBPR1)
$FF81 — FLASH-2 block protect register (FLBPR2)
FLASH-1 $C000 to $FFFF or FLASH-2 $4000 to $7FFF.
Figure 2. FLASH Block Protect Register (FLBPR)
Bit 7
DC
NV
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DC
NV
6
DC
NV
5
DC
NV
4
BPR3
NV
3
BPR2
NV
2
BPR1
NV
1
MOTOROLA
AN1827
BPR0
Bit 0
NV

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