AN1827 Freescale Semiconductor / Motorola, AN1827 Datasheet - Page 8
AN1827
Manufacturer Part Number
AN1827
Description
Programming and Erasing FLASH Memory on the MC68HC908AS60
Manufacturer
Freescale Semiconductor / Motorola
Datasheet
1.AN1827.pdf
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Application Note
8
ERASE — Erase Control Bit
PGM — Program Control Bit
There are two FLASH block protect registers, FLBPR1 and FLBPR2, for
FLASH-1 and FLASH-2 arrays, respectively.
BPR3 — Block Protect Register Bit 3
This read/write bit configures the memory for the erase operation.
ERASE is interlocked with the PGM bit such that both bits cannot
be set at the same time.
This read/write bit configures the memory for the program
operation. PGM is interlocked with the ERASE bit such that both
bits cannot be set at the same time.
•
•
This bit protects the memory contents in the address range:
Freescale Semiconductor, Inc.
Reset:
Read:
Write:
NV — Non-volatile, 1 if programmed, 0 if erased
DC — Don’t care
For More Information On This Product,
1 = Erase operation selected
0 = Erase operation unselected
1 = Program operation selected
0 = Program operation unselected
1 = Address range protected from erase or program
0 = Address range open to erase or program
$FF80 — FLASH-1 block protect register (FLBPR1)
$FF81 — FLASH-2 block protect register (FLBPR2)
FLASH-1 $C000 to $FFFF or FLASH-2 $4000 to $7FFF.
Figure 2. FLASH Block Protect Register (FLBPR)
Bit 7
DC
NV
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DC
NV
6
DC
NV
5
DC
NV
4
BPR3
NV
3
BPR2
NV
2
BPR1
NV
1
MOTOROLA
AN1827
BPR0
Bit 0
NV
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