MA739 Panasonic Semiconductor, MA739 Datasheet

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MA739

Manufacturer Part Number
MA739
Description
Silicon epitaxial planar type
Manufacturer
Panasonic Semiconductor
Datasheet

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Schottky Barrier Diodes (SBD)
MA2Q739 (MA739)
Silicon epitaxial planar type
For high-frequency rectification
I Features
I Absolute Maximum Ratings T
Note) * 1 : With a printed-circuit board
I Electrical Characteristics T
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
526
• Forward current (average) I
• Reverse voltage (DC value) V
• Allowing automatic insertion with the emboss taping
Reverse voltage (DC)
Repetitive peak reverse voltage
Average forward current
Non-repetitive peak forward
surge current
Junction temperature
Storage temperature
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
Pulse Generator
(PG-10N)
R
* 2 : The peak-to-peak value in one cycle of 50 Hz sine-wave
2. Rated input/output frequency: 10 MHz
3. * : t
s
= 50 Ω
human body and the leakage of current from the operating equipment.
Parameter
(non-repetitive)
Parameter
rr
* 2
measuring instrument
Bias Application Unit N-50BU
A
*
* 1
W.F.Analyzer
(SAS-8130)
R
i
= 50 Ω
F(AV)
R
Symbol
: 90 V
V
I
I
F(AV)
: 0.7 A type
T
V
FSM
RRM
T
stg
R
a
j
Symbol
= 25°C
V
a
I
C
t
R
rr
F
= 25°C
t
−40 to +125
−40 to +125
Rating
0.7
90
90
10
V
I
V
I
I
F
F
rr
Note) The part number in the parenthesis shows conventional part number.
V
R
R
= 0.7 A
= I
R
= 10 mA, R
= 90 V
= 10 V, f = 1 MHz
R
t
= 100 mA
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
= 2 µs
Unit
°C
°C
V
V
A
A
t
Conditions
p
L
= 100 Ω
t
I
F
Marking Symbol: PE
I
I
R
F
R
Output Pulse
L
= 100 mA
= 100 mA
= 100 Ω
I
t
rr
rr
2
= 10 mA
New Mini-Power Type Package (2-pin)
Min
1.2 ± 0.4
t
4.4 ± 0.3
5.0
+ 0.4
− 0.1
Typ
50
1
1.2 ± 0.4
Max
100
0.8
1
0 to 0.05
1 : Anode
2 : Cathode
Unit : mm
Unit
mA
pF
ns
V

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MA739 Summary of contents

Page 1

... Schottky Barrier Diodes (SBD) MA2Q739 (MA739) Silicon epitaxial planar type For high-frequency rectification I Features • Forward current (average) I • Reverse voltage (DC value) V • Allowing automatic insertion with the emboss taping I Absolute Maximum Ratings T Parameter Reverse voltage (DC) Repetitive peak reverse voltage ...

Page 2

Schottky Barrier Diodes (SBD)  125° 75°C 0.1 25°C − 20°C 0.01 0.001 0.000 1 0 0.2 0.4 0.6 0.8 1.0 1 Forward voltage V F  T ...

Page 3

... No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. ...

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