TF256 Sanyo Semicon Device, TF256 Datasheet - Page 2

• Manufacturer Part Number: TF256
• Description: N-channel Silicon Junction FET
• Manufacturer: Sanyo Semicon Device

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Electrical Characteristics at Ta=25°C
Test Circuit
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
[Ta=25°C, V CC =2.0V, R L =2.2kΩ, Cin=5pF, See specifi ed Test Circuit.]
Voltage Gain
Reduced Voltage Characteristic
Frequency Characteristic
Total Harmonic Distortion
Output Noise Voltage
400
350
300
250
200
150
100
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
50
0
0
0.5
Parameter
1.0
Drain-to-Source Voltage, V DS -- V
1.5
5pF
OSC
I D -- V DS
2.0
2.5
3.0
V (BR)GDO
V GS (off)
I DSS
| yfs |
Ciss
Crss
G V
ΔG VV
ΔGvf
THD
V NO
Symbol
3.5
VTVM
2.2kΩ
33μF
+
4.0
V
I G =--100μA
V DS =2V, I D =1μA
V DS =2V, V GS =0V
V DS =2V, V GS =0V, f=1kHz
V DS =2V, V GS =0V, f=1MHz
V DS =2V, V GS =0V, f=1MHz
V IN =10mV, f=1kHz
V IN =10mV, f=1kHz, V CC =2.0V → 1.5V
f=1kHz to 110Hz
V IN =30mV, f=1kHz
V IN =0V, A curve
4.5
IT15213
THD
5.0
TF256
V CC =2.0V
V CC =1.5V
Conditions
500
400
300
200
100
450
350
250
150
50
--0.50
0
--0.45
Rank
--0.40
3
4
5
3
4
5
3
4
5
3
4
5
Gate-to-Source Voltage, V GS -- V
--0.35
min
--0.30
--0.1
0.75
I D -- V GS
--20
100
140
240
Ratings
--0.25
typ
--0.35
--105
--0.20
--0.5
--0.6
--0.9
0.35
1.7
3.1
1.0
1.0
2.0
3.0
1.4
0.9
--0.15
max
--100
--0.10
--1.0
--1.0
--1.3
--2.0
--1.0
180
280
450
No. A1616-2/5
V DS =2V
--0.05
IT16271
Unit
mS
μA
pF
pF
dB
dB
dB
dB
%
V
V
0
Datasheet pdf - http://www.DataSheet4U.net/