BF2000W Siemens Semiconductor Group, BF2000W Datasheet - Page 3

• Manufacturer Part Number: BF2000W
• Description: Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
• Manufacturer: Siemens Semiconductor Group

Semiconductor Group
Electrical Characteristics at T
Parameter
AC characteristics
Forward transconductance
V
Gate 1 input capacitance
V
Gate 2 input capacitance
V
Feedback capacitance
V
Output capacitance
V
Power gain
V
Power gain
V
Noise figure
V
Noise figure
V
Gain control range
V
Semiconductor Group
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
= 5 V, I
= 5 V, I
= 5 V, I
= 8 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 8 V, VG2S = 4 ... -2V, f = 800 MHz
D
D
D
D
D
D
D
D
D
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
G2S
G2S
G2S
G2S
G2S
G2S
G2S
G2S
G2S
= 4 V, f = 1 kHz
= 4 V, f = 1 MHz
= 4 V, f = 1 MHz
= 4 V, f = 1 MHz
= 4 V, f = 1 MHz
= 4 V, f = 45 MHz
= 4 V, f = 800 MHz
= 4 V, f = 45 MHz
= 4 V, f = 800 MHz
A
= 25 °C, unless otherwise specified.
3
3
Symbol
g
C
C
C
C
G
G
F
F
fs
G
g1ss
g2ss
dg1
dss
ps
ps
ps
min.
28
40
-
-
-
-
-
-
-
-
Values
typ.
1.2
0.8
1.1
24
25
29
22
1
-
-
max.
Au -17-1998
BF 2000W
-
-
-
-
-
-
-
-
-
-
1998-11-01
Unit
mS
pF
fF
pF
dB