BFT92W Siemens Semiconductor Group, BFT92W Datasheet

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BFT92W

Manufacturer Part Number
BFT92W
Description
PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA)
Manufacturer
Siemens Semiconductor Group
Datasheet

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Part Number
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Quantity
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Part Number:
BFT92W
Manufacturer:
NXP
Quantity:
30 000
PNP Silicon RF Transistor
ESD: Electrostatic discharge sensitive device, observe handling precaution!
1) T
• For broadband amplifiers up to 2GHz
• Complementary type: BFR 92W (NPN)
Type
BFT 92W
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
Semiconductor Group
at collector currents up to 20mA
S
S
is measured on the collector lead at the soldering point to the pcb.
105 °C
Marking Ordering Code
W1s
Q62702-F1681
1)
1
Symbol
V
V
V
I
I
P
T
T
T
R
C
B
j
A
stg
CEO
CBO
EBO
tot
thJS
Pin Configuration
1 = B
2 = E
- 65 ... + 150
- 65 ... + 150
Values
200
150
15
20
25
2
3
225
3 = C
Package
SOT-323
BFT 92W
Dec-11-1996
Unit
V
mA
mW
°C
K/W

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BFT92W Summary of contents

Page 1

PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W (NPN) ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code BFT 92W W1s Q62702-F1681 Maximum ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base cutoff current Emitter-base cutoff current ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA 500 MHz C CE Collector-base capacitance MHz CB Collector-emitter capacitance ...

Page 4

SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 4.5354 fA VAF = 10.983 1.1172 - VAR = 47.577 1.206 - RBM = 1.5939 CJE = 1.7785 ...

Page 5

Total power dissipation P * Package mounted on epoxy 300 mW P tot 200 150 100 Permissible Pulse Load thJS K ...

Page 6

Collector-base capacitance 1MHz 1.4 cb 1.2 1.0 0.8 0.6 0.4 0.2 0 Power Gain ...

Page 7

Power Gain Parameter 16 I =15mA ...

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