BSS159 Siemens Semiconductor Group, BSS159 Datasheet
BSS159
Manufacturer Part Number
BSS159
Description
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
Manufacturer
Siemens Semiconductor Group
Datasheet
1.BSS159.pdf
(4 pages)
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SIPMOS
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm.
Semiconductor Group
• N channel
• Depletion mode
• High dynamic resistance
Type
BSS 159
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
R
Gate source voltage
Gate-source peak voltage, aperiodic
Continuous drain current
T
DC drain current, pulsed
T
Power dissipation
T
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Therminal resistance, chip-substrate - reverse side
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
A
A
A
GS
= 25 °C
= 25 °C
= 25 °C
= 20 k
®
Small-Signal Transistor
V
50 V
DS
I
0.16 A
D
R
8
DS(on)
1
1)
Package
SOT-23
Symbol
V
V
V
V
I
I
P
T
T
R
R
D
Dpuls
j
stg
DS
DGR
GS
gs
tot
thJA
thJSR
Pin 1
G
Ordering Code
Q67050-T6
Preliminary data
-55 ... + 150 °C
-55 ... + 150
55 / 150 / 56
Values
E
0.16
0.48
0.36
50
50
Pin 2
350
285
14
20
S
May-30-1996
BSS 159
Pin 3
Unit
V
A
W
K/W
D
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BSS159 Summary of contents
Page 1
SIPMOS Small-Signal Transistor • N channel • Depletion mode • High dynamic resistance Type V DS BSS 159 50 V Maximum Ratings Parameter Drain source voltage Drain-gate voltage Gate source voltage Gate-source peak voltage, ...
Page 2
Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage 250 µ Gate threshold voltage µ Drain-source cutoff current ...
Page 3
Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance V = -4.5 ...
Page 4
Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C A Inverse diode direct current,pulsed °C A Inverse diode forward voltage 0 ...