BSS284 Siemens Semiconductor Group, BSS284 Datasheet - Page 2

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BSS284

Manufacturer Part Number
BSS284
Description
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)
Manufacturer
Siemens Semiconductor Group
Datasheet

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1) For package mounted on aluminium
Electrical Characteristics, at T
Semiconductor Group
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Therminal resistance, chip-substrate- reverse side
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Parameter
Static Characteristics
Drain- source breakdown voltage
V
Gate threshold voltage
V
Zero gate voltage drain current
V
V
V
Gate-source leakage current
V
Drain-Source on-state resistance
V
GS
GS =
DS
DS
DS
GS
GS
= -50 V, V
= -50 V, V
= -25 V, V
= 0 V, I
= -20 V, V
= -10 V, I
V
DS,
I
D
D
= -1 mA
= -0.25 mA, T
D
GS
GS
GS
DS
= -0.13 A
= 0 V, T
= 0 V, T
= 0 V, T
= 0 V
j
j
j
15 mm x 16.7 mm x 0.7 mm
= 25 °C
= 125 °C
= 25 °C
j
= 25 °C
j
= 25°C, unless otherwise specified
1)
2
Symbol
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
1)
Symbol
T
T
R
R
min.
-
-
-
-
-
j
stg
thJA
thJSR
-50
-0.8
Values
typ.
-
-
-1.2
-0.1
-2
-1
5
-55 ... + 150
-55 ... + 150
55 / 150 / 56
Values
E
350
285
max.
-
-1.6
-1
-60
-0.1
-10
10
18/02/1997
BSS 284
Unit
°C
K/W
Unit
V
µA
nA

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