SSM6J53FE Toshiba Semiconductor, SSM6J53FE Datasheet

SSM6J53FE

Manufacturer Part Number

SSM6J53FE

Description

High Current Switching Applications

Manufacturer

Toshiba Semiconductor

Datasheet

1.SSM6J53FE.pdf (6 pages)

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Part Number:

SSM6J53FE

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TOSHIBA

Quantity:

8 000

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○ High-Speed Switching Applications

○ Power Management Switch Applications

•

Absolute Maximum Ratings

Electrical Characteristics

Drain-Source breakdown voltage

Drain cut-off current

Gate leakage current

Gate threshold voltage

Forward transfer admittance

Drain-Source on-resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Switching time

Total gate charge

Gate-Source charge

Gate-Drain charge

Drain-Source forward voltage

Note 2: Pulse test

Note:

Note 1: Mounted on an FR4 board.

1.5 V drive

Suitable for high-density mounting due to compact package

Low on-resistance : R

Drain-Source voltage

Gate-Source voltage

Drain current

Drain power dissipation

Channel temperature

Storage temperature range

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm

Characteristics

Turn-on time

Turn-off time

: R

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

= 136 mΩ (max) (@V

= 204 mΩ (max) (@V

= 364 mΩ (max) (@V

Pulse

(Ta = 25°C)

SSM6J53FE

Symbol

(BR) DSS

(BR) DSX

DS (ON)

DSS

GSS

(Note 1)

DSF

stg

oss

off

iss

rss

f = 1 MHz

= -2.5 V)

= -1.8 V)

= -1.5 V)

= −1 mA, V

= −1.0 A, V

= −0.1 A, V

= 1.8 A, V

−55~150

Rating

= −20 V, V

= −3 V, I

= −10 V, V

= −10 V, I

= 0 ~ −2.5 V, R

= −16 V, I

= ± 8 V, V

= − 4 V

-1.8

-3.6

)

500

150

-20

± 8

Test Condition

= −1 mA

= −0.9 A

= 0

= −0.9 A

= 0

= +8 V

= −2.5 V

= −1.8 V

= −1.5 V

= -1.8 A,

= 0

Unit

°C

= 4.7 Ω

(Note 2)

Weight: 7.0 mg (typ.)

JEDEC

JEITA

TOSHIBA

ES6

−0.3

Min

−20

−12

2.7

⎯

1,2,5,6 :Drain

3 :Gate

4 :Source

Typ.

10.6

122

137

568

7.4

3.3

0.8

5.4

⎯

SSM6J53FE

1.6±0.05

1.2±0.05

2-2N1A

Max

−1.0

136

204

364

−10

1.2

±1

2007-11-01

⎯

Unit : mm

Unit

mΩ

μA

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SSM6J53FE Summary of contents

Page 1

... −2 off − − 1 DSF SSM6J53FE 1.6±0.05 1.2±0. Unit 1,2,5,6 :Drain mW 3 :Gate °C 4 :Source °C ES6 JEDEC JEITA TOSHIBA 2-2N1A Weight: 7.0 mg (typ.) Min Typ −20 ⎯ ...

Page 2

... OUT −2 (ON) (c) V OUT Equivalent Circuit (top view requires a higher voltage than V GS (on) GS (off) 2 SSM6J53FE 10% 90% 90% 10 off -1mA D and V requires (off) < V < (on) ...

... DS – -0.1 A Common Source 25 ° °C −25 ° (V) GS – -1.5 V -1 SSM6J53FE I – -10000 Common Source -1000 -100 °C -10 25 °C -1 −25 °C -0.1 -0.01 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 Gate - Source voltage V ( – ...

Page 4

... DS C iss C oss C rss -10 -100 ( – Common Source - ∼ -2 ° 4.7 Ω ( SSM6J53FE |Y | – Common Source ° 0.3 0.1 0.03 0.01 -10 -100 1 -1000 Drain current I (mA) D Dynamic Input Characteristic ...

Page 5

... Cu Pad: 645 mm ) 100 10 1 0.001 0.01 0.1 Pulse width t Safe operating area 1 ms* 10 ms* 10s increase -10 -30 -100 ( SSM6J53FE – 100 1000 ( – 600 Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, 500 Cu Pad: 645 mm 400 300 200 100 100 Ambient temperature Ta (° ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM6J53FE 20070701-EN GENERAL 2007-11-01 ...

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SSM6J53FE Toshiba Semiconductor, SSM6J53FE Datasheet

SSM6J53FE

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SSM6J53FE Summary of contents

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