SSM6J53FE Toshiba Semiconductor, SSM6J53FE Datasheet - Page 4

• Manufacturer Part Number: SSM6J53FE
• Description: High Current Switching Applications
• Manufacturer: Toshiba Semiconductor

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5000
3000
1000
1000
500
300
100
100
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
50
30
10
10
1
−25
-0.1
0
0.01
Common
Source
Ta = 25 °C
f = 1 MHz
V GS = 0 V
t on
t r
t off
t f
Drain – Source voltage V
Ambient temperature Ta (°C)
0
25
Drain current I
0.1
-1
C – V
50
V
t – I
th
– Ta
D
DS
75
-10
D
1
Common Source
V DS = -3 V
I D = -1 mA
100
Common Source
V DD = -10 V
V GS = 0 ∼ -2.5 V
Ta = 25 °C
R G = 4.7 Ω
DS
C oss
C rss
C iss
(A)
(V)
125
-100
150
10
4
0.03
0.01
-1.5
-0.5
0.3
0.1
-10
30
10
-2
-1
-9
-8
-7
-6
-5
-4
-3
-2
-1
3
0
1
0
1
0
0
Common Source
V DS = -3 V
Ta = 25 °C
Common Source
V GS = 0 V
Ta = 25 °C
G
Drain-Source voltage V
0.2
Dynamic Input Characteristic
Total gate charge Q
5
-10
Drain current I
V DD = -16 V
0.4
S
D
10
I
|Y
DR
I
DR
fs
-100
| – I
0.6
– V
D
DS
D
15
g
0.8
(mA)
-1000
Common Source
I D = -1.8 A
Ta = 25 °C
DS
(nC)
SSM6J53FE
20
(V)
1
2007-11-01
-10000
1.2
25