CPH3409 Sanyo Semicon Device, CPH3409 Datasheet

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CPH3409

Manufacturer Part Number
CPH3409
Description
Ultrahigh-Speed Switching Applications
Manufacturer
Sanyo Semicon Device
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CPH3409-TL
Manufacturer:
Motorola
Quantity:
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Part Number:
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Manufacturer:
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Ordering number : ENN7123
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : KJ
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)
R DS (on)
V GS (off)
Symbol
Symbol
V GSS
V DSS
I GSS
I DSS
Tstg
I DP
Tch
P D
yfs
I D
Ultrahigh-Speed Switching Applications
I D =1mA, V GS =0
V DS =30V, V GS =0
V GS = 8V, V DS =0
V DS =10V, I D =1mA
V DS =10V, I D =3A
I D =3A, V GS =4V
I D =1A, V GS =2.5V
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
CPH3409
Conditions
Package Dimensions
unit : mm
2152A
Conditions
1
3
2.9
1.9
2
0.8mm)
2
0.4
[CPH3409]
min
N-Channel Silicon MOSFET
0.4
6.3
30
N1501 TS IM TA-3080
Ratings
0.15
typ
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
Ratings
32
40
CPH3409
9
Continued on next page.
--55 to +150
0.05
max
150
1.3
1.2
10
42
56
30
10
20
1
5
No.7123-1/4
Unit
Unit
m
m
W
V
V
A
A
V
V
S
C
C
A
A

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CPH3409 Summary of contents

Page 1

... I DSS V DS =30V GSS 8V (off =10V =1mA yfs V DS =10V = (on =3A = (on =1A =2.5V N-Channel Silicon MOSFET CPH3409 [CPH3409] 2.9 0.15 0.4 3 0. Gate 2 : Source 3 : Drain SANYO : CPH3 Ratings 30 10 ...

Page 2

... See specified Test Circuit See specified Test Circuit =10V =4V =5A Qgs V DS =10V =4V =5A Qgd V DS =10V =4V = =5A = OUT CPH3409 S 0.6 0.7 0.8 0.9 1.0 IT03816 Ta= IT03818 Ratings min ...

Page 3

... Total Gate Charge 1.4 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature CPH3409 0.3 IT03820 1000 100 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2001. Specifications and information herein are subject to change without notice. CPH3409 PS No.7123-4/4 ...

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