CPH3414 Sanyo Semicon Device, CPH3414 Datasheet
CPH3414
Manufacturer Part Number
CPH3414
Description
Ultrahigh-Speed Switching Applications
Manufacturer
Sanyo Semicon Device
Datasheet
1.CPH3414.pdf
(4 pages)
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Part Number:
CPH3414
Manufacturer:
Sanyo
Quantity:
42 000
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Part Number:
CPH3414-TL
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SONYO
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20 000
Ordering number : ENN6862
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : KP
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
Symbol
V GSS
V DSS
I GSS
I DSS
Tstg
I DP
Tch
P D
yfs
I D
Ultrahigh-Speed Switching Applications
I D =1mA, V GS =0
V DS =30V, V GS =0
V GS = 16V, V DS =0
V DS =10V, I D =1mA
V DS =10V, I D =1A
I D =1A, V GS =10V
I D =0.5A, V GS =4V
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
CPH3414
Conditions
Package Dimensions
unit : mm
2152A
Conditions
1
3
2.9
2
1.9
0.8mm)
2
0.4
[CPH3414]
min
N-Channel Silicon MOSFET
1.2
1.4
30
13001 TS IM TA-3065
Ratings
typ
0.15
Ratings
190
115
2.0
CPH3414
--55 to +150
Continued on next page.
0.05
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
max
150
150
270
2.2
8.8
1.0
2.6
30
20
10
1
No.6862-1/4
Unit
m
m
Unit
W
V
V
A
A
V
V
S
C
C
A
A
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CPH3414 Summary of contents
Page 1
... I D =1mA DSS V DS =30V GSS 16V (off =10V =1mA yfs V DS =10V = (on =1A =10V R DS (on =0.5A =4V N-Channel Silicon MOSFET CPH3414 [CPH3414] 2.9 0.15 0.4 3 0. Gate 2 : Source 3 : Drain SANYO : CPH3 Ratings ...
Page 2
... See specified Test Circuit t f See specified Test Circuit =10V =10V =2.2A Qgs V DS =10V =10V =2.2A Qgd V DS =10V =10V =2. =2.2A =15V OUT CPH3414 S 3.0 2.5 2.0 1.5 1.0 0.5 0.6 0.8 1.0 IT02698 300 Ta=25 C 250 200 ...
Page 3
... Drain Current =10V I D =2. 0.5 1.0 1.5 2.0 2.5 3.0 Total Gate Charge 1.2 1.0 0.8 0.6 0.4 0 100 Amibient Tamperature CPH3414 IT02702 1000 V DD =15V =10V 100 7 ...
Page 4
... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2001. Specifications and information herein are subject to change without notice. CPH3414 PS No.6862-4/4 ...