CPH5809 Sanyo Semicon Device, CPH5809 Datasheet
CPH5809
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CPH5809 Summary of contents
Page 1
... The other is a schottky barrier diode that features short reverse recovery time and low forward voltage. Each device incorporated in the CPH5809 is equiva- • lent to the MCH3411 and to the SBS005, respectively. Specifications Absolute Maximum Ratings at Ta=25 C ...
Page 2
... V R =10V, f=1MHz cycle =100mA, see specified Test Circuit. Rthj-a Mounted on a ceramic board (600mm 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode (Top view Test Circuit [SBD] Duty 10% V OUT 10 s CPH5809 Ratings min typ max 0.4 1.3 3.5 5 118 ...
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... Drain Current Time -- I D 100 (on 0.1 1.0 Drain Current CPH5809 [MOSFET =1.0V 0 0.8 0.9 1.0 0 0.25 IT04632 [MOSFET] 150 Ta=25 C 125 100 --60 --40 IT04634 ...
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... Reverse Voltage 1000 100 1 1.0 10 Reverse Voltage CPH5809 [MOSFET 1 0 Ta= Single pulse 2 Mounted on a ceramic board(600mm 0.01 3.0 3.5 4 0.01 IT04640 [MOSFET] 1 ...
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... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2002. Specifications and information herein are subject to change without notice. CPH5809 PS No.7267-5/5 ...