CPH5831 Sanyo Semicon Device, CPH5831 Datasheet - Page 2

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CPH5831

Manufacturer Part Number
CPH5831
Description
N-Channel Silicon MOSFET General-Purpose Switching Device Applications
Manufacturer
Sanyo Semicon Device
Datasheet

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4
Electrical Characteristics at Ta=25 C
Package Dimensions
unit : mm
2171
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
1
5
0.95
2.9
4
Parameter
3
2
0.4
0.4
0.15
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
0.05
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
Symbol
Rth(j-a)
t d (on)
t d (off)
I DSS
I GSS
Coss
Ciss
Crss
V SD
Qgs
Qgd
V F 1
V F 2
V R
yfs
Qg
I R
t rr
C
t r
t f
I D =1mA, V GS =0
V DS =20V, V GS =0
V GS = 8V, V DS =0
V DS =10V, I D =1mA
V DS =10V, I D =1.5A
I D =1.5A, V GS =4V
I D =1A, V GS =2.5V
I D =0.5A, V GS =1.8V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =10V, V GS =4V, I D =3A
V DS =10V, V GS =4V, I D =3A
V DS =10V, V GS =4V, I D =3A
I S =3A, V GS =0
I R =1.5mA
I F =0.5A
I F =1A
V R =6V
V R =10V, f=1MHz cycle
I F =I R =100mA, See specified Test Circuit.
Mounted on a ceramic board (600mm
CPH5831
Conditions
Electrical Connection
5
1
2
0.8mm)
4
min
3
2
3.36
0.4
20
15
Ratings
typ
0.85
0.85
0.82
0.27
0.30
280
138
5.6
8.8
48
58
72
60
38
13
35
35
25
65
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
Top view
max
0.32
0.35
600
110
1.3
1.2
10
63
82
15
1
No.8220-2/6
C / W
Unit
m
m
m
nC
pF
pF
pF
nC
nC
pF
ns
ns
ns
ns
ns
V
V
S
V
V
V
V
A
A
A

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